Allicdata Part #: | FDS8949TR-ND |
Manufacturer Part#: |
FDS8949 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 40V 6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface ... |
DataSheet: | FDS8949 Datasheet/PDF |
Quantity: | 15000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 955pF @ 20V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS8949 is a type of field-effect transistor (FET) array, specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). A FET is a semiconductor device that combines the properties of both a transistor and a diode and can be used to control current or voltage levels. FET arrays consist of multiple FETs arranged in a particular order, and have many advantages over discrete FETs, including greater operating speed and reduced power dissipation.
The FDS8949 has two main applications: power management and signal processing. It is often used in power applications such as power supplies and DC/DC converters, where it is used to regulate voltage and current levels. In signal processing applications, it is used for voltage division, level shifting, and signal conversion. In both cases, the FDS8949 is used to efficiently control current and voltage levels.
The FDS8949 works by using an insulated gate field-effect transistor (IGFET) to form a channel between the source and drain electrodes. The current flow through this channel is then controlled by the configuration of the gate voltage. For example, by increasing the gate voltage, more current can be allowed to flow through the channel, while decreasing the gate voltage reduces the flow of current. In this way, the FDS8949 can be used to control the current and voltage levels in a circuit.
The FDS8949 is designed to be easy to use and offers flexible features such as an adjustable gate cutoff voltage and wide gate-source current level range. It is also designed to be space-saving and low cost, making it ideal for many applications where space and cost constraints may be a factor. Furthermore, the FDS8949 is also highly reliable, with a maximum operating temperature range of up to 125 °C.
In conclusion, the FDS8949 is an invaluable component for both power and signal processing applications. It provides efficient current and voltage control, and is easy to use and affordable. Furthermore, it is highly reliable and offers flexible features, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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