FDS86242

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The FDS86242 is a high performance, silicon n-channel MOSFET device with a symmetrical drain-source breakdown voltage (BVDSS) range of 20V. This device is also capable of withstanding a maximum operating temperature of 150°C and is available in a small SOT-223 package, making it a good choice for applications in space-constrained applications.

Application Field

MOSFETs in general, and the FDS86242 in particular, are used in many types of power management applications, such as switching and multi-level circuits. With its symmetrical BVDSS of 20V, it is ideal for designing voltage superior to the ordinary 5V, 12V and 24V levels, and is also suitable for supply bias line in high temperature environments. As its small footprint (SOT-223) makes it easy to integrate with existing circuits, the FDS86242 is increasingly used in audio amplifiers, load switches in portable electronic devices, motor control, DC-DC converters, regulator circuits, and many more.

Working Principle

A MOSFET is an insulated-gate field effect transistor which belongs to the family of unipolar transistors. This type of transistor utilises a three terminal arrangement of drain, source and gate, with the gate and source terminals separated by an oxide layer. This layer creates a resistor that maintains the transistor in its on or off state. In order for the resistance to be reduced to allow current to flow through, a voltage must be applied to the gate.

The FDS86242 MOSFET is specifically designed for switching applications, by incorporating a high performance silicon n-channel device with a BVDSS range of 20V, along with a maximum operating temperature of 150°C. Its small SOT-223 package makes it ideal for integrating with existing circuits, while its breakdown voltage allows it to be used in audio amplifiers, load switches and many other power management applications. The working principle of the FDS86242 MOSFET is very simple; a voltage applied to the gate can be used to switch between an on and off state, thus allowing current to flow through the drain and source.

In conclusion, the FDS86242 MOSFET is an ideal choice for power management applications which require a high performance device with a high breakdown voltage, and its small size makes it suitable for integration with existing circuits. Its working principle is also simple; a voltage applied to the gate can be used to switch the device between an on and off state, thus allowing current to flow through the drain and source terminals.

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