FDS8958B_G

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6.4A, 4.5A
Rds On (Max) @ Id, Vgs:	26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.8nC @ 4.5V, 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	540pF @ 15V, 760pF @ 15V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDS8958B_G is a kind of high-performance field-effect transistor array, which is now widely used in many industrial applications. It consists of two n-channel enhancement-mode FETs and has a common source connection, making them suitable for high-speed switching applications. The device can operate over a wide range of voltages, from low voltage to high voltage, making it very useful in different circuit applications. It has a wide range of applications such as protection circuit, ESD protection and high speed signal transmission. This device offers excellent performance in both high- and low-voltage applications. Its low on-state resistance and high current capability makes it suitable for a wide range of high-speed switching applications. In addition to its high-speed performance, FDS8958B_G also offers high reliability and energy efficiency. The device also features low input capacitance and low leakage current, making them efficient power devices. FDS8958B_G is typically used for high-speed switching applications. It can switch between high and low levels of voltage, making it suitable for high-speed data transmission. The device can be used as an inverter, receiver/transmitter, or amplifying device. The working principle of the FDS8958B_G is that when a positive voltage is applied to its gate terminal, the device allows current to flow between the source and drain terminals. This is known as enhancement mode operation and allows the device to switch between the high and low states quickly. The device can also be used in the reverse direction with a negative voltage applied to the gate terminal, known as depletion mode operation. The FDS8958B_G is also used in protection circuits, which prevent unwanted electrical signals from entering the circuit. The device can provide protection from overvoltage, undervoltage, and also from overcurrent. In conclusion, FDS8958B_G has a wide range of applications due to its high performance, reliability and energy efficiency, as well as its ability to operate over a wide range of voltages. It is suitable for high-speed switching applications such as protection circuits, ESD protection and high speed signal transmission.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description