Allicdata Part #: | FDS86140TR-ND |
Manufacturer Part#: |
FDS86140 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 11.2A 8SOIC |
More Detail: | N-Channel 100V 11.2A (Ta) 2.5W (Ta), 5W (Tc) Surfa... |
DataSheet: | FDS86140 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2580pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 11.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS86140 is a single-channel field effect transistor (FET) that is manufactured by Fairchild Semiconductor. It is a high-voltage, low-on-resistance, wide-bandwidth n-type enhancement mode FET. This transistor is ideal for applications such as power supplies, drive circuits, and low-noise amplifiers. In this article, we discuss the applications and the working principle of the FDS86140.
Applications :
- Power Supplies - The FDS86140 is used in power supply circuits as a switching element for controlling the power flow. It provides an efficient way to switch the power from the input to the output.
- Drive Circuits - The FDS86140 is used as an amplifier in drive circuits to provide a large amount of current. It is ideal for high-power applications such as motor drives and other systems that require large amounts of current.
- Low-Noise Amplifiers - The FDS86140 is also used in low-noise amplifier circuits. The low-noise characteristics of this FET provide superior noise cancellation, which is necessary for low-noise amplifier designs.
Working Principle :
The FDS86140 operates on a basic principal of current control. The device consists of an oxide-confined channel between two source and drain regions. A gate electrode is connected to the oxide, and when a positive voltage is applied to the gate, it inverts the area below it. This creates a new region with a different type of conducting material, which allows electrons to flow between the source and drain. The amount of current that flows is determined by the amount of voltage applied to the gate.
The FDS86140 has an extremely low on-state resistance and high switching speed. This makes it ideal for applications that require high power efficiency and fast switching performance. The FDS86140 is also designed with high voltage capabilities, which makes it suitable for use in power applications.
The FDS86140 is a versatile FET that can be used in a variety of applications. It is an excellent choice for power supplies, drive circuits, and low-noise amplifier designs due to its exceptional high-voltage, low-on-resistance, and fast-switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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