FJN3303RBU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FJN3303RBU is a single pre-biased bipolar transistor (BJT) for use in medium and high power amplifier design. It utilizes a high performance NPN die with a zero-bias collector current and low capacitance, providing suitable electrical characteristics for reliable amplifier performance. This device has an integrated collector-emitter voltage of -6 volts and a base-emitter voltage of 1.5V. It is also rated for up to 8A collector current and 8V collector-emitter voltage.

The FJN3303RBU has a wide range of applications in which it can provide the necessary power and current transfer characteristics for amplifier designs. These applications include audio amplifiers, power amplifier stages, and current gain stages. It is also suitable for use as a device for driving other components in power electronic circuits. It can also be used in DC to DC converters, as well as in high-side power switches and rectifier circuits.

The working principle of the FJN3303RBU relies on the same basic rules of operation as other pre-biased transistors. When a positive voltage is applied to the base, the resulting current flowing through the base will flow through the collector and the emitter. This flow of current causes electrons in the base region to be attracted to the collector, forming a small number of electron-hole pairs. This attraction of electrons to the collector results in a current gain from the base to the collector. In order for the transistor to conduct, the voltage on the base must exceed that of the emitter by a certain magnitude, commonly referred to as ‘Vbe’ in transistor circuitry.

The high current and voltage ratings of the FJN3303RBU make it particularly suitable for use as a medium to high power transistor. It has a wide power bandwidth, meaning it can be used in applications where high frequency, high power signals are involved. Additionally, due to its zero bias collector current and low capacitance, the device is very reliable and provides stable amplifier performance.

In summary, the FJN3303RBU is a single pre-biased NPN bipolar transistor which is ideal for applications requiring high current and voltage capability. It utilizes a zero bias collector current and low-capacitance, providing stable performance in amplifier designs. Additionally, due to its wide power bandwidth, it is suitable for use in high frequency, high power applications. With its robust performance characteristics, the FJN3303RBU is an excellent choice for a wide range of power and amplifier designs.

The specific data is subject to PDF, and the above content is for reference