FJN3303FTA Discrete Semiconductor Products |
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Allicdata Part #: | FJN3303FTATB-ND |
Manufacturer Part#: |
FJN3303FTA |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 1.5A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 650mW ... |
DataSheet: | FJN3303FTA Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.05914 |
6000 +: | $ 0.05322 |
10000 +: | $ 0.04731 |
50000 +: | $ 0.03943 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 500mA, 1.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 500mA, 2V |
Power - Max: | 650mW |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | FJN3303 |
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The FJN3303FTA is a kind of single bipolar junction transistor (BJT). It is a popular device in many applications, especially those requiring switching and interfacing. In this article, we will discuss the general application field and working principle of the FJN3303FTA.
The Application field of FJN3303FTA
The FJN3303FTA is a high performance transistor with a high current capacity and high switching speed. This makes it ideal for high power applications such as power switching, audio amplifiers, and motor controllers. It can also be used in low-noise applications, such as signal amplifiers and audio filters. Additionally, it is well-suited for general-purpose, high-load applications, such as switches and relays. In addition, the FJN3303FTA is often used in very high frequency radio frequency (RF) circuits, such as RF amplifiers and RF switching.
The Working Principle of FJN3303FTA
The FJN3303FTA is a three-terminal device, with a collector, base, and emitter. The collector is the most negatively charged terminal, while the emitter is the most positively charged terminal. The base is the middle terminal that controls current flow through the device. When the base is forward biased, it acts as a gate, allowing the collector-emitter current flow to pass from the Emitter to the Collector. Once the current reaches the collector, it is then typically outputted to a load.
The current through the collector can be controlled by varying the voltage applied to the base. For example, when the voltage increases, the current through the collector increases, leading to an increase in power output. Conversely, when the voltage decreases, the current decreases, leading to a decrease in power output. Thus, by varying the voltage applied to the base, the FJN3303FTA can be used to switch power on and off to a load.
Moreover, the FJN3303FTA has a very high slew rate, which means that it can switch on and off very quickly. This makes it ideal for applications that require fast switching speeds. Additionally, the FJN3303FTA has very low power consumption, making it a great choice for battery-operated devices.
Conclusion
The FJN3303FTA is a popular single bipolar junction transistor, due to its high current capacity, high switching speeds, and low power consumption. It is especially useful for applications such as RF amplifiers and RF switching, power switching, and audio amplifiers. By varying the voltage applied to the base terminal of the FJN3303FTA, the current through the collector can be controlled, allowing for precise power switching and power amplification.
The specific data is subject to PDF, and the above content is for reference
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