Allicdata Part #: | FJN3310RTA-ND |
Manufacturer Part#: |
FJN3310RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3310RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FJN3310RTA is a Transistors – Bipolar (BJT) – Single, Pre-Biased device. This type of device is often used in applications that require a single-channel signal processing. The device features a low noise amplifier, band-pass filter, and variable gain control.
The FJN3310RTA comes with a wide range of applications including radio frequency signal processing, signal monitoring, signal detection, and gain control. The device is also used in military electronics, CCTV monitoring, and RF switching. It has an operating temperature range of -55°C to +125°C and is suitable for use in high-temperature, vibration-proof environments.
The device works by providing stable gain, high linearity, and low noise. It also offers excellent temperature stability and low distortion. The device is pre-biased to ensure optimal performance and is capable of operating with a wide range of supply voltages.
The working principle of FJN3310RTA is pretty straightforward. It is a current-controlled device that amplifies an incoming signal from an RF or low-frequency signal source. The signal is then filtered and amplified before being outputted to the desired destination. The device also features gain control, which allows the user to adjust the gain without the need for additional circuitry.
The FJN3310RTA is a high-performance and highly reliable device. It has excellent linearity, high power handling capabilities and low distortion. The device is also easy to configure, making it easy to use in many applications. The device is also highly resistant to environmental contaminants, allowing it to operate reliably in many different types of environments.
The FJN3310RTA is a very versatile device and can be used in a wide range of applications. It is an ideal solution for applications requiring single-channel signal processing, signal monitoring, and gain control. Its wide range of applications, low power consumption, and high performance make it an attractive choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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FJN3313RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
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FJN3313RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3314RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
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FJN3304RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3309RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3315RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3305RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3304RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
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