FJN3303RTA Discrete Semiconductor Products |
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Allicdata Part #: | FJN3303RTATB-ND |
Manufacturer Part#: |
FJN3303RTA |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3303RTA Datasheet/PDF |
Quantity: | 12000 |
2000 +: | $ 0.02446 |
6000 +: | $ 0.02206 |
10000 +: | $ 0.01918 |
50000 +: | $ 0.01535 |
100000 +: | $ 0.01439 |
200000 +: | $ 0.01279 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | FJN3303 |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Box (TB) |
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A FJN3303RTA is a type of pre-biased bipolar transistor, also known as a Bipolar Junction Transistor (BJT). It is a semiconductor device composed of two N-type semiconductor layers that are separated by a thin base layer. It is designed to amplify voltage and current signals, as it consists of two transistors connected in series. In addition, it is widely used in digital circuits, such as digital to analog (D/A) converters and digital logic circuits.
The FJN3303RTA is a BJT since it contains both an emitter and collector. The emitter serves as the source of electrons while the collector acts as the drain. Electrons flow from the emitter to the collector when the base current is increased, producing the amplified voltage and current signals. When the base current is reduced, the flow of electrons from the emitter to the collector is also decreased, thus decreasing the voltage and current signals as well.
The FJN3303RTA provides a pre-biased circuitry, which means that theload bias is preset and established before the current is applied tothe device. This allows the circuit to operate in the linear region immediately upon applying the power, which improves the performance of the circuit and reduces power consumption. Moreover, the FJN3303RTA is capable of providing fast switching speeds, giving it the benefit of being used in high-speed applications such as digital circuits.
The FJN3303RTA also simplifies the wiring process with its three-terminal structure. This makes it easy to connect the correct terminals to each other while reducing the cost of the circuit. In addition, its small size makes the FJN3303RTA a great choice for those needing to save on space. Its low power consumption and low noise output are also advantages, allowing the device to be used in low noise and low power applications.
The FJN3303RTA applications include amplifiers, converters, and digital logic circuits. It can be used as an amplifier in audio circuits, providing a high gain and low distortion response. It can also be used as a D/A converter, being a low cost and low power device. And lastly, it can be used in digital logic circuits as it can provide fast switching speeds and excellent noise reduction.
To sum up, the FJN3303RTA is ideal for those looking for a pre-biased bipolar transistor with small size, fast switching speed and low power consumption. Its capability to amplify and switch signals makes it a great option for amplifiers, converters and digital logic circuits. Moreover, the FJN3303RTA offers the advantage of being able to simplify wiring and ensure that the correct terminals are connected to one another.
The specific data is subject to PDF, and the above content is for reference
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FJN3313RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
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FJN3311RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3310RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3313RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3314RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3306RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3310RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3307RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3303RBU | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3304RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3309RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3315RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3305RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3304RBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
FJN3315RTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 300MW T... |
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