FJN3314RTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	300mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	FJN3314

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Introduction

The FJN3314RTA is a bipolar junction transistor (BJT) that falls into the category of single, pre-biased transistors. This type of transistor is a three-terminal semiconductor device that is used to amplify or switch signals. It utilizes a voltage applied to one of its terminals (the base) to control the current flowing between the other two terminals (the collector and the emitter). This can be done by increasing or decreasing the amount of current flowing through the circuit. The FJN3314RTA transistor is used primarily in high-frequency communications, such as radio and television receivers, as well as in the switching circuits of many consumer electronics items.

Application Field

The FJN3314RTA transistor is commonly used in the high-frequency communication circuits of consumer electronics and commercial applications. In consumer electronics, this type of transistor is used in television and radio receivers, as well as in various audio/video components. In commercial applications, it is often used in switchgear, high-frequency amplifiers, and timer circuits. This type of transistor is also used in military applications, such as radios and guidance systems that require high-frequency switching and amplification. In addition, the FJN3314RTA transistor is used in a variety of industrial applications such as inverters, drives, and motor controls.

Working Principle

The FJN3314RTA utilizes a bipolar junction transistor (BJT) structure. This type of transistor is made up of three doped layers: a P-type layer of semiconductor, an N-type layer, and a Base layer. The base is the controlling terminal, and when a voltage is applied to it, it controls the amount of current flowing between the collector and the emitter.When voltage is applied to the base, the P-type and N-type semiconductor layers become polarized, and the current flow between the collector and the emitter is changed. By changing the amount of current flow between the collector and the emitter, the amplification and switching of an incoming signal can be achieved.The FJN3314RTA transistor is a pre-biased type, which means that a voltage must already be applied to the base terminal in order for the device to operate. The benefit of this type of transistor is that it has a higher current density, which means that it can safely and efficiently amplify and control high-frequency signals.

Conclusion

The FJN3314RTA is a pre-biased bipolar junction transistor (BJT) and is used for amplifier and switching applications in high-frequency communication circuits. This type of transistor is ideal for use in consumer electronics and commercial applications, as well as in the military and industrial sectors. This transistor has a high current density, which makes it ideal for the amplification and switching of high-frequency signals.

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