FJN3303TA Allicdata Electronics

FJN3303TA Discrete Semiconductor Products

Allicdata Part #:

FJN3303TATB-ND

Manufacturer Part#:

FJN3303TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 1.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 1.1W T...
DataSheet: FJN3303TA datasheetFJN3303TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Power - Max: 1.1W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: FJN3303
Description

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FJN3303TA is a type of transistor referred to as a Bipolar Junction Transistor (BJT). It is a type of transistor that is made up of two diodes that are connected to a common emitter (CE) and collector (CB). The FJN3303TA is a general-purpose transistor that is commonly used in amplifying or switching applications.

A transistor has three terminals: the base, collector, and emitter. The base is the control terminal, through which current is allowed to flow between the collector and emitter once the transistor is turned on. The current flowing through the collector-emitter junction is amplified. The amount of current that flows between the collector and the emitter is determined by the current flowing through the base.

In the most basic terms, the FJN3303TA can be used in various applications such as amplifying audio, controlling power, programming a microcontroller, or even switching digital circuits. It is available in two versions - NPN and PNP. The NPN device has a low collector-emitter saturation voltage (VCE(sat)), and the PNP device has a high collector-emitter saturation voltage (VCE(sat)).

The working principle of the FJN3303TA is simple; current flows through the base, causing the N-type layer to become more positive and the P-type layer to become more negative. This creates a PN-junction between the base and collector. This junction is the resistor that transistors use to control current flow. As the transistor operates, the current flowing through the junction between the collector and emitter increases which then amplifies the signal.

The FJN3303TA has a wide variety of uses in analog and digital electronics. Due to its low-voltage and low-noise characteristics, it is commonly used in amplifiers and as a control element in digital circuits. It is also used as a switch in relays, solenoids, and other applications where fast switching is required. The PNP version of the FJN3303TA is suitable for use in low-side switching applications.

One of the advantages of the FJN3303TA is its ability to switch quickly and accurately due to the low-voltage and low-noise characteristics. This makes it well-suited for high-frequency, high-speed switching applications. It is also relatively inexpensive and can be used in a variety of applications. It is also a relatively reliable, robust device, making it suitable for use in a wide range of applications.

In conclusion, the FJN3303TA transistor is a popular three-terminal device that is commonly used in amplifying, switching, and digital circuits. Its small size, low voltage, and low noise make it suitable for a variety of applications. It is available in both NPN and PNP versions and can be used to switch quickly and accurately at high frequencies and speeds.

The specific data is subject to PDF, and the above content is for reference

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