Allicdata Part #: | FJN3304RBU-ND |
Manufacturer Part#: |
FJN3304RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3304RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJN3304RBU bipolar junction transistor (BJT) is a single pre-biased device designed to provide high performance. It offers excellent performance from an extremely small package size, making it ideal for high-frequency applications. In addition, the FJN3304RBU is an excellent choice for low on-resistances and low noise applications.
The FJN3304RBU features an NPN configuration, allowing for smaller size and more efficient operation for applications that require high performance. It has an operating frequency range from 100kHz to 5GHz, allowing for much higher frequencies than traditional bipolar transistors. The FJN3304RBU also offers a low leakage currents, making it ideal for low-noise applications.
The FJN3304RBU is ideal for use in high-speed switching circuits, radio frequency (RF) amplifiers, filters, and other such electronic circuits. It is also well suited for use in low noise and low leakage current applications, such as LED drivers, motor control and instrumentation. Additionally, the FJN3304RBU can be used as an input stage for analog-to-digital conversion due to its low noise and low leakage current.
The FJN3304RBU is pre-biased, meaning it is designed to be used in applications in which the voltage bias is already established. This allows the FJN3304RBU to operate efficiently with minimal power dissipation, lowering power requirements. The FJN3304RBU\'s internal components have been designed to provide excellent thermal stability and performance.
In terms of its working principle, the FJN3304RBU employs a three-terminal NPN transistor structure involving a base, a collector, and an emitter. When a bias voltage is applied between the base and the emitter, a current called the base current flows from the emitter through the base into the collector. This causes the reverse current to flow from the collector to the emitter and an amplified voltage is generated across the collector-emitter terminals. The current gain of the device is determined by the ratio of the collector current to the base current.
The FJN3304RBU is a versatile device that is well suited for a variety of different applications such as RF, analog and digital circuits, instrumentation, power supplies, motor control and LED drivers. Its high performance and small package size make it ideal for high-frequency applications and its low leakage current, low power consumption and excellent thermal stability are advantageous for low noise applications. The FJN3304RBU is an excellent choice for a variety of high-speed applications due to its pre-biased nature, allowing it to operate efficiently with minimal power dissipation.
The specific data is subject to PDF, and the above content is for reference
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