FJN3308RTA Allicdata Electronics
Allicdata Part #:

FJN3308RTA-ND

Manufacturer Part#:

FJN3308RTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJN3308RTA datasheetFJN3308RTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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FJN3308RTA is a single pre-biased bipolar junction transistor (BJT) device, produced by SJK Electronics. It is a common collector emitter transistor and is suitable for switching, amplification and saturating purposes due to its low reverse transfer conductance.

Application Field

FJN3308RTA transistors are mainly used for low and high power applications. It can be used in high-frequency and high-speed switching applications, such as RF (radio frequency) control amplifiers, radio amplitude modulators, amplifiers for ultrasound imaging, and audio amplifiers. They are also used for amplifying low-level signals, such as in medical equipment, hearing aids and medical instruments. They are also used in electronic equipment, such as electronic fuel injection, automotive and automotive diagnostics, and high-speed digital circuits such as microprocessors.

Working Principle

The FJN3308RTA transistor works according to the same principles as all transistors. It has three main components: the collector, the base, and the emitter. Current passes through the emitter and base, and the collector collects the charge that is generated as the current passes through. The current flowing through the transistor controls the amount of current that can flow through the collector. When more current is passed through the base, more current flows through the collector.

The bipolar nature of the FJN3308RTA transistor makes it suitable for high-frequency and speedy applications due to its rapid response time. It is also suitable for power performance applications since it has high current gain, low saturation voltage and low reverse transfer current.

The FJN3308RTA is also a pre-biased device, meaning it is designed to work with a predetermined bias voltage. This helps to reduce the amount of power needed to operate the transistor. The biasing voltage can be easily adjusted to suit the application, and thus allows for greater flexibility in design.

FJN3308RTA transistors are a robust and reliable device, and so are suitable for many different applications. They are long-lasting and require little maintenance, and thus can be used in a wide variety of electronic devices.

The specific data is subject to PDF, and the above content is for reference

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