Allicdata Part #: | FJN3309RTA-ND |
Manufacturer Part#: |
FJN3309RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3309RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN3309RTA is part of a series of transistors manufactured by Fairchild Semiconductor, and classified as a Bipolar Junction Transistor (BJT) designed and operated in a single and pre-biased configuration. This particular model designates a PNP transistor with a maximum output current of 250mA, a typical current gain of 20 to 55, a maximum emitter-base breakdown voltage of 30V, and a maximum collector-base breakdown voltage of 30V. It can firstly be recognized as a PNP transistor because the collector and emitter are on the opposite sides of the package than an NPN transistor. The purpose of a PNP transistor is to regulate the current of a power source. It is also important to note that there is also a collector voltage limit of 28V for this transistor, representing the amount of maximum power the transistor can handle.
In order to understand the workings of this transistor, it is important to understand the components of a typical PNP transistor. The transistor consists of three terminals or pins: the Collector, the Emitter, and the Base. The Base serves as the input and controls the current flow from the Collector to the Emitter. The Collector is the most positive top pin, and the Emitter is the most negative bottom pin. To utilize the power held within a transistor, the Base must be biased to a certain level, typically using a resistor. This activates the transistor allowing the current to flow from the Collector to the Emitter in an adjustable yet controlled manner.
The collector-emitter saturation region is the most frequently used configuration for a PNP transistor, as it is most responsive and relatively easy to characterize. In this mode, a small amount of voltage applied on the base will result in a large current flow from the Collector to the Emitter, which can be adjusted by the Base voltage. A transistor in saturation can be assumed to draw no base current and to reach the saturation region the voltage at the Collector must be below the voltage at the Emitter.
The FJN3309RTA has many wide ranging application fields. These include alternating current (AC) power supplies with voltage regulators, industry process control, integrated circuits, optical-electronic components and equipment, as well as industrial equipment and process automation. The device also operates at temperatures of up to 150°C, making it applicable to environments characterized by high temperatures.
In summary, the FJN3309RTA is a pre-biased, single Bipolar Junction Transistor (BJT) that allows for dynamic and reliable control of the current flow from an external power source. The device can operate at temperatures of up to 150°C, and associated applications include AC power supplies with voltage regulators, industry process control, and integrated circuits, amongst others.
The specific data is subject to PDF, and the above content is for reference
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