Allicdata Part #: | FJN3304RTA-ND |
Manufacturer Part#: |
FJN3304RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3304RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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Bipolar Junction Transistor (BJT) is a type of transistor or semiconductor device where the current is generated by the movement of electrons between two components—the emitter and base—within a single package. As its name suggests, FJN3304RTA is an example of this type of transistors. Its application and working principle are outlined in this article.
FJN3304RTA is a single, pre-biased BJT, with a current gain of 175, a collector-emitter saturation voltage of 0.4V, and an ON-resistance of 3 ohms. Thus, it is suitable for use in linear, low power applications such as audio amplifiers, switching power supplies and other low power circuits. It is also suitable for use in high speed switching of up to 50kHz, making it ideal for use in applications such as motor drives, AC motors, and other high speed switching applications.
The working principle of the FJN3304RTA is based on the field-effect transistor (FET). A FET is a three-terminal device composed of a drain, a source, and a gate. The drain and the source are connected to a voltage source, while the gate determines the amount of current that will flow through the device. When a voltage is applied to the gate, it creates an electric field that controls the current flow through the device. This is the principle upon which the FJN3304RTA is based.
In operation, the FJN3304RTA works by using the electric field generated by the gate voltage to control the current flow through the device. The applied voltage causes a depletion of electrons at the edges of the gate, resulting in a decrease in the current flow in the device. This decreases the amount of current available to the base, controlling the current gain. In addition, the collector-emitter saturation voltage is also affected by the gate voltage, as it sets the voltage across the device. By controlling the voltage between the collector and the emitter, the FJN3304RTA can be used to adjust the output of the device.
FJN3304RTA is an ideal device for any applications that require linear, low power operation. Its low power consumption, high speed switching capabilities, and low ON-resistance make it a suitable choice for applications where space and power consumption is at a premium. Additionally, by controlling the voltage across the device, the FJN3304RTA can be used to control the current gain, allowing it to be used in any number of applications.
The specific data is subject to PDF, and the above content is for reference
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