Allicdata Part #: | FJN3315RTA-ND |
Manufacturer Part#: |
FJN3315RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3315RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN3315RTA is a single pre-biased transistor that is part of the bipolar junction transistor (BJT) family. This type of transistor is a three terminal device that can be used in either a common-emitter or common-base circuit. The FJN3315RTA has a high-breakdown voltage rating and high-current carrying capacity, making it ideal for use in a variety of applications.
The FJN3315RTA\'s operation is based on the principle of minority carrier injection. In this type of device, a heavy doping layer is used in both the emitter and the base region. A voltage is then applied to the base to create a region of minority carriers. This region, known as the space charge zone, impedes the majority carriers, which can lead to the creation of an inverted behavior of the device. When this occurs, the current induced in the collector can be higher than that induced in the emitter.
There are a variety of applications where the FJN3315RTA can be used. These include, but are not limited to, switching, amplifier circuits, power supplies, voltage regulators, and frequency converter, among others. It can be used in all types of communications equipment, including wireless cell phones, receivers, and satellite equipment, as well as in all types of instrumentation where high voltages and currents are required.
The FJN3315RTA also has a variety of features that make it an ideal choice for many applications. These features include a low current gain, low on-resistance, high-voltage breakdown, and excellent frequency response. In addition, it has an integrated multiple collector-emitter junction, which increases its efficiency and power handling capacity.
The FJN3315RTA is easy to install, requiring only simple wiring connections. It is also quite reliable, making it a good choice for a number of different applications. The transistor is also quite affordable, making it an attractive option for a variety of budgets.
In summary, the FJN3315RTA is a single pre-biased transistor that is part of the bipolar junction transistor (BJT) family. It is capable of high-voltage breakdown and has a high-current carrying capacity. It is also quite reliable, easy to install, and affordable. As such, it is ideal for a range of applications, such as switching, amplifier circuits, power supplies, voltage regulators, and frequency converters.
The specific data is subject to PDF, and the above content is for reference
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