Allicdata Part #: | FJN3306RTA-ND |
Manufacturer Part#: |
FJN3306RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3306RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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.The FJN3306RTA features a unique design among single, pre-biased, bipolar transistors. It offers a number of advantages that make it suitable for a wide variety of applications. Here we will discuss the applications and working principles of this transistor.
Application Field
The FJN3306RTA is a pre-biased transistor that is designed for signal amplification in a variety of applications. It is particularly useful for signal amplification in radio frequency (RF) circuits, as its pre-biased design reduces the need for external bias circuits, thus reducing the cost and complexity of the RF design. It can also be used in analog and digital audio signal processing applications, such as active speakers and amplifiers, where its pre-biased design can reduce distortion and improve signal fidelity by providing a constant bias voltage, regardless of the signal input. Additionally, its fast switching speed makes it suitable for use in pulse-width modulated (PWM) control circuits.
Working Principle
The FJN3306RTA is a NPN bipolar transistor, meaning that it has a collector, an emitter and a base terminal, as well as an internal base resistor and a pre-biased voltage. The pre-biased voltage, which is provided by a built-in voltage regulator, provides a constant supply voltage to the internal base resistor, regardless of the signal input. This constant voltage ensures that the base resistor does not change its resistance, which, in turn, provides a constant bias voltage for the collector-emitter junction. As a result, the collector-emitter junction is always partially conducting, allowing the transistor to switch at a rapid speed and providing signal gain without distortion. The transistor also features a high breakdown voltage, which ensures that the collector-emitter junction remains stable even when subjected to high voltages.
The FJN3306RTA is thus an ideal choice for applications where signal amplification is required without significant distortion. Its pre-biased design reduces the need for external bias circuits, thus making it a cost-effective choice, while its fast switching speed makes it suitable for use in pulse-width modulated (PWM) control circuits. Its high breakdown voltage also ensures that the transistor remains stable even under high voltage conditions. All this makes the FJN3306RTA an ideal choice for a variety of signal amplification applications.
The specific data is subject to PDF, and the above content is for reference
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