Allicdata Part #: | FJN3312RTA-ND |
Manufacturer Part#: |
FJN3312RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3312RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN3312RTA is a single, pre-biased, bipolar junction transistor (BJT) designed for use in audio signal applications where low distortion is desired. It is a general-purpose device and is suitable for a variety of applications, including amplifiers and oscillator circuits. The FJN3312RTA has a high input impedance, making it well suited to drive high-impedance loads, and it has a low noise figure, making it ideal for noise-sensitive applications.
A bipolar transistor is a type of semiconductor device that has three terminals, or leads. It is composed of two PN junction diodes, joined in series, with a base contact connecting the two PN junctions. In the FJN3312RTA, the Emitter is the negative terminal, the Collector is the positive terminal, and the Base is the circuit connecting the two PN junctions. The FJN3312RTA has a PNP type of functionality, meaning that current flows from the Collector to the Emitter when the Base is positively biased.
The working principle of the FJN3312RTA is based on the fact that a small current applied at the base of a PNP transistor will cause a relatively large current to flow from the collector to the emitter. This is the way that a transistor amplifies current. The amount of current gain of the FJN3312RTA is called its hFE, which stands for "high-frequency current gain".
The FJN3312RTA can be used in a variety of applications, including amplifier circuits, oscillations, and switching. Its primary function is as an amplifier, since it can provide a large current gain for a given base current. It is also useful for applications requiring low distortion, since it has a low noise figure. This means that it can reduce the amount of undesired noise or distortion introduced into an audio signal.
The FJN3312RTA also can be used in oscillator circuits to provide a steady-state sine wave. In this application, it is connected to a feedback circuit which amplifies the input signal by a certain amount and sends it back to the base of the transistor, maintaining the oscillation. The FJN3312RTA can also be used for switching applications, since the base current can be used to control the current flow from collector to emitter. This makes the transistor useful for controlling the on/off state of a load, or for relay switching applications.
The FJN3312RTA is a general-purpose bipolar junction transistor, suitable for use in low distortion audio applications, and for use in amplifier, oscillator, and switching circuits. Its high input impedance and low noise figure make it ideal for noise-sensitive applications, while its current gain makes it a good choice for amplification applications. The FJN3312RTA is an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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