Allicdata Part #: | FJN3313RTA-ND |
Manufacturer Part#: |
FJN3313RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3313RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN3313RTA is a single, pre-biased bipolar junction transistor (BJT), designed to provide efficient, high-speed switching capabilities. The device can be used in a variety of applications, including radio frequency (RF), logic circuits and power amplification. As a bipolar transistor, the FJN3313RTA is a three-terminal device, consisting of two junctions between a base electrode and two separate emitter and collector regions.
Constriction
The device is constructed with a silicon material and its two junctions are defined by two pn junctions. The first, known as the base-emitter junction, is the controlling element and is used to turn the device on and off. The second, known as the base-collector junction, is the output element, delivering current from the collector to the emitter.
Working principle
The FJN3313RTA works as a voltage-controlled switch, with its collector terminal always connected to a higher voltage source than its emitter. In order to turn on the device, the base terminal is presented with a positive voltage. This positive voltage causes a large number of electrons and holes to move across the base-emitter junction, creating a large base current. This base current then causes a much larger collector current to flow, allowing electrical current to travel from the collector to the emitter.
When the base voltage is removed, the base-emitter junction shuts off and the device returns to the off state, preventing current from travelling between the collector and emitter. This action makes the device suitable for use in switched circuit elements and for most applications where high speed switching is required.
Applications
The FJN3313RTA is primarily used in radio frequency (RF) switching applications, such as frequency synthesizers, amplifiers, filters, and modulators. It can also be used in low impedance, high-speed switching of power supplies, logic circuits, and miniature and high-speed switching of transistors.
In addition, the FJN3313RTA can be used in high speed, single-ended switching of solenoids and relays. It can also be used to control digital logic signals, such as in discrete Digital-to-Analog Converters, and can be used in LED drivers, as well as in high power switching circuits.
The pre-biased nature of the FJN3313RTA provides an added advantage when it is used in a circuit: the device does not require any additional components for pre-bias and can therefore be used to develop circuits that are more efficient, faster and simpler.
Conclusion
The FJN3313RTA is a single, pre-biased bipolar junction transistor (BJT) designed for a wide range of applications, including RF switching, power supply switching, digital logic switching and LED drivers. Its two junctions are defined by two pn junctions, with the base terminal controlling the on/off action of the device. It can be used as an efficient, high-speed switch, allowing current to flow between the collector and emitter when the base voltage is applied.
The specific data is subject to PDF, and the above content is for reference
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