FJN3315RBU Allicdata Electronics
Allicdata Part #:

FJN3315RBU-ND

Manufacturer Part#:

FJN3315RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJN3315RBU datasheetFJN3315RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The FJN3315RBU is a type of single, pre-biased bipolar junction transistor (BJT), meaning that the transistor is charged with a small signal current before operating as an amplifier of current or voltage. The name “RBU” in the transistor’s nomenclature refers to its non-inverting pre-bias, meaning that the collector and emitter bias of the transistor is in the forward direction (from base to emitter). This allows the transistor to more easily switch between high- and low-impedance states, making it especially suitable for use in electronic switches and amplifiers.

The FJN3315RBU’s primary application is as a switch, amplifier, or audio/noise generator in consumer electronics, automotive, and industrial applications. Its unique pre-biased nature allows it to provide reliable performance in many of these applications and can be used to power small motors, LED indicators, and other high-current devices.

The operating principle of this transistor is based on a voltage divider, which is used to divide a large input voltage into a smaller one across a frequency range. This is what allows the transistor to provide amplification or switching. In a BJT, the base, collector, and emitter terminals of the transistor form the junction capacitance (Cj). The base-emitter junction is forward-biased and the collector-emitter junction is reverse biased. When a small voltage is applied to the base terminal of the transistor, it allows a current to flow from the collector to the emitter. This allows the transistor to switch between high- and low-impedance states, depending on the voltage applied. This also allows for some amplification, as the current flowing through the collector-emitter junction is proportional to the voltage applied to the base terminal.

The FJN3315RBU is also used in applications such as audio amplifiers, voltage regulator circuits, and dc-to-dc converters. Additionally, thanks to its pre-bias characteristic, it can be used to begin a circuit without having to wait for the applied voltage to reach a certain level. This makes it especially suitable for applications which require a quick response, such as automotive and industrial applications. The FJN3315RBU can be driven directly by logic signals and is capable of switching loads up to 200mA.

Finally, the FJN3315RBU is a low-cost transistor, making it an attractive option for those looking for an effective and affordable BJT. Its low-power requirements, high gain, and pre-biased nature make it a great choice for many applications, and it is sure to continue to be a popular choice for both hobbyists and professional circuit designers.

The specific data is subject to PDF, and the above content is for reference

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