Allicdata Part #: | FJN3315RBU-ND |
Manufacturer Part#: |
FJN3315RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3315RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN3315RBU is a type of single, pre-biased bipolar junction transistor (BJT), meaning that the transistor is charged with a small signal current before operating as an amplifier of current or voltage. The name “RBU” in the transistor’s nomenclature refers to its non-inverting pre-bias, meaning that the collector and emitter bias of the transistor is in the forward direction (from base to emitter). This allows the transistor to more easily switch between high- and low-impedance states, making it especially suitable for use in electronic switches and amplifiers.
The FJN3315RBU’s primary application is as a switch, amplifier, or audio/noise generator in consumer electronics, automotive, and industrial applications. Its unique pre-biased nature allows it to provide reliable performance in many of these applications and can be used to power small motors, LED indicators, and other high-current devices.
The operating principle of this transistor is based on a voltage divider, which is used to divide a large input voltage into a smaller one across a frequency range. This is what allows the transistor to provide amplification or switching. In a BJT, the base, collector, and emitter terminals of the transistor form the junction capacitance (Cj). The base-emitter junction is forward-biased and the collector-emitter junction is reverse biased. When a small voltage is applied to the base terminal of the transistor, it allows a current to flow from the collector to the emitter. This allows the transistor to switch between high- and low-impedance states, depending on the voltage applied. This also allows for some amplification, as the current flowing through the collector-emitter junction is proportional to the voltage applied to the base terminal.
The FJN3315RBU is also used in applications such as audio amplifiers, voltage regulator circuits, and dc-to-dc converters. Additionally, thanks to its pre-bias characteristic, it can be used to begin a circuit without having to wait for the applied voltage to reach a certain level. This makes it especially suitable for applications which require a quick response, such as automotive and industrial applications. The FJN3315RBU can be driven directly by logic signals and is capable of switching loads up to 200mA.
Finally, the FJN3315RBU is a low-cost transistor, making it an attractive option for those looking for an effective and affordable BJT. Its low-power requirements, high gain, and pre-biased nature make it a great choice for many applications, and it is sure to continue to be a popular choice for both hobbyists and professional circuit designers.
The specific data is subject to PDF, and the above content is for reference
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