| Allicdata Part #: | FJN3301RBU-ND |
| Manufacturer Part#: |
FJN3301RBU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 50V 0.1A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300m... |
| DataSheet: |  FJN3301RBU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
| Power - Max: | 300mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
Description
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The FJN3301RBU is an NPN planar epitaxial type bipolar junction transistor (BJT) made with a Ni-silicide gate. It is a single transistor with a wide range of applications. In this article, we\'ll explore the FJN3301RBU’s application field, as well as its working principle and information about its structure and practice.
This device has a wide range of applications. It can be used in switching circuits and as an amplifier in audio and power conditioners, as well as in motor speed control systems and the like. In addition, its isolation technology is applicable to optical communications and clock or signal transmission applications. The TVS technology applied to the FJN3301RBU is useful for ultra-high-speed communications and for controlling high-power circuits. It has a maximum hole emitter current of 500 mA, which makes it suitable for high-speed amplifiers.
The FJN3301RBU has two base terminals, one collector terminal and one emitter terminal. These terminals are connected to it via a Ni-silicide gate material that enables faster switching time and higher frequency operation. The Ni-silicide gate is a semiconductor material in which the silicon atoms are ionized and replaced with a metal such as nickel or silver. This increases the transistor’s switching speed, which allows faster switching speed. In addition, the Ni-silicide gate material also prevents the transistor from experiencing any electrical damage due to high-voltage parameters.
The working principle of the FJN3301RBU is based on two main principles: collector current and gain. The collector current is generated when a voltage is applied to the emitter terminal. This causes an electron flow between the emitter and collector terminals of the FJN3301RBU. The gain of the transistor is the ratio of the output current to the input current. The gain of the FJN3301RBU is usually around 100, but can range from 50 to 500.
The structure of the FJN3301RBU is composed of a base, a collector, and an emitter. The base is usually made from an alloy of silicon and aluminum. The Collector is made from an alloy of aluminum, silicon, and nickel. The emitter is typically made from an alloy of boron and aluminum. The FJN3301RBU also has a built-in temperature sensor, which measures the temperature of the transistor and allows it to operate at its optimal temperature.
In practice, the FJN3301RBU can be used as an amplifier in audio applications, or as a switch in motor speed control systems. Carefully adjusting the voltage applied to the emitter terminal can cause the transistor to switch on or off as needed. Careful adjustments must also be made to the collector and base terminals to ensure proper gain and current levels. Testing and adjusting the transistor using an ammeter and voltmeter can also help to ensure that the speed and gain of the transistor are correct for the application.
In conclusion, the FJN3301RBU is a single transistor with a wide range of applications. Its Ni-silicide gate technology allows for faster switching time and higher frequency operation. Its wide range of applications, including audio and power conditioners, motor speed control systems, and ultra-high-speed communications, make it an ideal choice for a variety of projects. The two main principles of the FJN3301RBU are collector current and gain, and its structure is composed of a base, collector, and emitter. When used correctly, the FJN3301RBU can provide excellent performance and reliability in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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