Allicdata Part #: | FJN3312RBU-ND |
Manufacturer Part#: |
FJN3312RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3312RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN3312RBU is an NPN bipolar junction transistor (BJT) with a single pre-biased design. The pre-bias enables the device to be used in applications that require specific levels of current conduction and functionality. This makes it an ideal device for a variety of applications, such as high-speed switching, audio input, and logic level control. In this article, we will discuss the applications and working principles of the FJN3312RBU.
The FJN3312RBU has a wide variety of applications. It is a low-noise, high-speed switching transistor with a maximum collector-emitter voltage of 20V. It can be used for high-speed switching, voltage amplitude control, logic level control, and current amplification. It is also suitable for audio input, providing an effective high-end signal gain of up to 125dB. Additionally, the FJN3312RBU can be used in low-frequency services, such as CCTV systems and Access control systems.
The FJN3312RBU is an NPN transistor with a single pre-bias design. The pre-bias allows for the device to be driven via its base-emitter voltage, and this allows for better control over the current amplification level of the device. The pre-bias also ensures that the device is capable of operating effectively when connected to an AC power source, eliminating the need for an external bias voltage.
The FJN3312RBU provides an improved operating frequency range compared to other standard NPN transistors, making it ideal for high-speed switching applications. The device can also be used for logic level control, providing excellent noise immunity due to its low-power consumption. Additionally, the FJN3312RBU can be used for current amplification as it provides a current gain of up to 38dB.
The FJN3312RBU also has excellent linearity characteristics, providing low distortion and ensuring accurate signal reproduction. The device operates at a wide range of temperature, from -55°C to +150°C, making it suitable for use in a variety of environmental conditions.
In summary, the FJN3312RBU is a low-noise, high-speed switching transistor with a single pre-biased design. Due to its excellent performance characteristics, the device is ideal for a number of applications, such as high-speed switching, voltage amplitude control, logic level control, audio input, and current amplification. The FJN3312RBU can be safely operated with an AC power source, and offers excellent linearity, low distortion, and wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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