FJN3305RBU Allicdata Electronics
Allicdata Part #:

FJN3305RBU-ND

Manufacturer Part#:

FJN3305RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJN3305RBU datasheetFJN3305RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: FJN3305
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Obsolete
Packaging: Bulk 
Description

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The FJN3305RBU is a transistor in the single, pre-biased Bipolar Junction Transistor (BJT) family. It is a four-terminal device consisting of three layers of semiconductor material. The middle layer is the base and it is designed to be forward-biased and connected to the external circuit. The outer layers of the transistor are the emitter and collector, respectively. The four terminals are input-source (IS), output-drain (OD), base (B), and emitter (E).The FJN3305RBU is suitable for use in both analog and digital applications. In analog applications, the FJN3305RBU is used to amplify and switch signals. This is done by controlling the base-to-emitter voltage to turn the transistor on and off. When the transistor is on, current flows from the collector to the emitter. The gain of this process can be easily adjusted by varying the base current. The FJN3305RBU can also be used to interface analog signals with digital circuits.In digital applications, the FJN3305RBU is used to amplify and switch logic levels. It is commonly used in logic gates and switching circuits, where it is used to amplify input signals to a logic level. The FJN3305RBU operates with a logic level output voltage and is capable of switching high frequency signals.The FJN3305RBU also provides protection against static and transient overvoltage, high temperature operation, and overcurrent conditions. It is designed to provide reliable protection from voltage spikes and short term overcurrent conditions. The protection circuit of the FJN3305RBU ensures that the transistor does not overheat due to excessive current and does not suffer from damage due to static electricity.The working principle of the FJN3305RBU consists of a base current bias and a small signal voltage representing the input signal. The base current bias is usually applied with an external resistor that connects to the base of the transistor, while the small signal voltage is applied directly to the base. This voltage will cause the collector current to change, causing the transistor to enter either saturation or cutoff.In saturation, the transistor is turned on and the collector-emitter voltage drop is small. This allows the transistor to conduct current across the emitter-collector junction, which increases the output current. In contrast, in the cutoff state, the transistor is turned off and the collector-emitter voltage drop is large. This inhibits current flow, and the output current is cut off.The FJN3305RBU is a versatile and efficient device that can be used in both analog and digital applications. Its high input impedance and low output resistance allow it to be used in a variety of circuits. Its protection circuit ensures the device is protected from static electricity and overvoltage conditions, ensuring reliable operation. The FJN3305RBU is ideal for use in a wide range of applications, from power electronics to consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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