Allicdata Part #: | FJN3308RBU-ND |
Manufacturer Part#: |
FJN3308RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3308RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN3308RBU is a single pre-biased bipolar transistor (BJT). This type of transistor is commonly used as a power amplifier, switch, or as an active load. FJN3308RBU is also suitable for use in general-purpose amplifiers or audio applications.
The FJN3308RBU is a four five ampere, 30 volt, PNP transistor constructed with a planar epitaxial NPN and PNP transistor with pre-biased collector junction. It is designed for use in low voltage requirements. It can be used to drive high current loads with very low voltage drops due to the pre-biased characteristics of the collector junction.
The FJN3308RBU features a high breakdown voltage, high Ic current gain, high fT frequency gain, low collector-emitter saturation voltage, and low leakage current. It also offers low thermal resistance and high power dissipation capability. It is capable of performing within the range of -65°C to +150°C.
The FJN3308RBU is commonly found in a wide range of applications such as motor control, automotive systems, robotics, industrial controllers, power supplies and converters, DC-DC converters, electronic lamp dimmer, audio amplification, and switching circuits. It can also be used in various systems such as lighting and HVAC applications.
The FJN3308RBU derives its power from a voltage potential difference across its collector-emitter junctions. This potential difference creates a current that flows through the collector-base junction. This current flows from the base to the collector, creating a base current which turns on the transistor and allows electrons to flow from the base to the collector. This creates a voltage drop across the collector-emitter junction which amplifies the input signal and produces an output signal. This process of weak signal amplification is one of the main working principles of this type of transistor.
In summary, the FJN3308RBU is a single pre-biased bipolar transistor (BJT). It is capable of driving high current loads with very low voltage drops and exhibiting low thermal resistance and high power dissipation. It is typically used as a power amplifier, switch, or active load and is commonly found in applications such as motor control, automotive systems, robotics, industrial controllers, power supplies and converters, DC-DC converters, electronic lamp dimmer, audio amplification, and switching circuits. It derives its power from a voltage difference across its collector-emitter junctions which amplifies the input signal and produces an output signal.
The specific data is subject to PDF, and the above content is for reference
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