Allicdata Part #: | FJN3307RTA-ND |
Manufacturer Part#: |
FJN3307RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3307RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The FJN3307RTA is a single, pre-biased, surface-mount bipolar junction transistor (BJT) with a maximum collector current of 3A. This device features 45V voltage rating, 8V Vce(sat) voltage rating, and a minimum guaranteed gain of 200. Due to its excellent hFE linearity and pre-biased operation, the FJN3307RTA is well suited for wide range of applications.
Applications
The FJN3307RTA can be used in many different types of applications such as motor control, lighting, power supplies, DC-DC converters, LCD bias, and switching regulators. Additionally, this transistor is used in rechargeables machines and appliances. The FJN3307RTA is also suitable for high frequency switching applications due to its excellent switching characteristics while also providing overload and reverse breakdown protection.
Working Principle
The FJN3307RTA is a type of bipolar junction transistor, which consists of a three layers of semiconductor material (base, emitter and collector) that are connected together to create a circuit that enables the transistor to amplify signals. The behavior of the transistor is governed by the “BJT Equation” which states that the collector current is equal to the product of the base current, the voltage of the base-emitter junction, and the current gain (hFE) of the transistor. This equation can be used to analyze the behavior of the transistor and to understand how changes in the input signal affect the output.
The FJN3307RTA is designed for pre-biased operation, which means it can handle higher input voltages. This is achieved by the addition of a reverse bias on the base-emitter junction. The pre-biased operation increases the current gain of the transistor and improves the switching performance. This allows the device to operate in a wider range of applications.
The FJN3307RTA is also designed with an integrated protection circuit that protects the device from overload and reverse breakdown conditions. This protection circuit trips in order to prevent any damage to the device due to excess current or incorrect polarity. The protection circuit also ensures the device’s longevity and improves its reliability.
The FJN3307RTA is an ideal device for a wide range of applications due to its reliable performance. Its pre-biased operation and integrated protection point make it extremely versatile. Additionally, its excellent switching characteristics make it suitable for high-frequency applications. The FJN3307RTA is a reliable and efficient device which can be used in various applications requiring BJTs.
The specific data is subject to PDF, and the above content is for reference
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