Allicdata Part #: | FQD5N15TF-ND |
Manufacturer Part#: |
FQD5N15TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 4.3A DPAK |
More Detail: | N-Channel 150V 4.3A (Tc) 2.5W (Ta), 30W (Tc) Surfa... |
DataSheet: | FQD5N15TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD5N15TF, more widely known as the FQPF5N15TM, is a MOSFET (or metal–oxide–semiconductor field effect transistor) that is widely used in high power switching applications. It is rated for a nominal drain current of 15 A and a drain-source voltage of 500 V, and has an effective channel thickness of only 2.5 nm, making it suitable for a wide range of power applications, including dealing with high amperage and high voltage signals. The FQD5N15TF is also commonly used for high current switching and for controlling large power loads.
The FQD5N15TF is a N-type MOSFET and utilizes a vertical N-channel, allowing for fast switching and high current transfer. The device has a maximum drain-to-source voltage of 500 V and a drain current of 15 A. It is also equipped with a gate-source voltage of -3 V to 15 V, and a drain-to-source breakdown voltage of 500 V. It is built on a 30 V silicon substrate, and is able to dissipate a maximum power of 200 W. The FQD5N15TF also offers an impressive power-to-cost ratio.
The FQD5N15TF has a wide operating temperature range of -55 °C to 175 °C. This wide range makes it an ideal choice for a variety of applications in different industries and environments. As with any MOSFET, the main purpose of the FQD5N15TF is to provide high power switching between two terminals or two circuits. MOSFETs are used in many common electrical appliances, such as power amplifiers, mobile phones, and computer motherboards. In addition, MOSFETs are often used in high-power automotive applications, such as fuel injection systems.
The FQD5N15TF is considered one of the mainstay MOSFETs for industrial use. Its main function is to actively switch between two terminals, depending on the logical control applied to the gate terminal. The FQD5N15TF can be driven by a variety of methods, including through the use of voltage signals, logic-level signals, and even physical control mechanisms. It is also capable of being driven by other input devices, such as programmable logic controllers (PLCs).
The FQD5N15TF is one of the most popular and widely used MOSFETs on the market. Its combination of high voltage, low cost and effective channel thickness make it an ideal option for a wide range of applications. Its ability to operate in a wide temperature range and to be driven by many types of controllers also make it very versatile. All of these factors have ensured that the FQD5N15TF is well suited for industries across the spectrum.
The specific data is subject to PDF, and the above content is for reference
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