FQD5N50CTM-WS

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A FQD5N50CTM-WS MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a high-speed, low-cost, small-package semiconductor device that utilizes the MOSFET switching action to control electric charge carriers (mainly electrons) in semiconductor logic circuits. The FQD5N50CTM-WS is specifically a single-channel MOSFET with a drain-source breakdown voltage of 500 volts, and a maximum blocking peak gate current of 5A. It is rated for a maximum power dissipation of 1 watt, and its total gate charge (Qgs) is 41.3 nanocoulombs (nC). It is rated for an operating temperature range of -65 to 175 degrees Celsius (C).

The FQD5N50CTM-WS is mainly used for power electronics applications. Its main application is in power switching and motor drives because of its superior power handling capabilities in a small package. It is also used in the design and manufacture of high-current applications such as motor controllers and solenoid switches. It has a low on-state resistance and high efficiency, meaning it can be used in applications that need fast switching and high power capability.

The FQD5N50CTM-WS MOSFET works by utilizing the MOSFET switching action, which relies on two different mechanisms to control the flow of electric charge carriers. The first mechanism is the electrostatic action of the MOSFET, where a voltage applied to the gate (the control electrode) creates an electric field in the channel (the semi-conducting region) that controls the flow of charge carriers. The second mechanism is the thermally induced field effect, which is generated by the application of a steady-state current flowing through the channel, which changes the temperature of the channel and affects the behavior of the charge carriers.

The drain-source region of the FQD5N50CTM-WS is designed using four distinct transistor layers: the drain, the source, the gate, and the substrate. These four distinct sections create two different action paths for electric current to flow. The source-to-drain path is referred to as the forward direction and provides a low-resistance, high-conductivity path for current to flow. The gate-to-source path is referred to as the reverse direction and provides a high-resistance, low-conductivity path for current to flow.

When a positive voltage is applied to the gate of the FQD5N50CTM-WS, the current from the source to the drain is enhanced by the effect of the electric field created by the gate voltage. This leads to a low-resistance, high-conductivity path for current to flow in the forward direction. When the positive voltage is removed from the gate, the electrons are repelled, thereby reducing the current in the forward direction. This allows the charge carriers to flow in the reverse direction, providing a high-resistance, low-conductivity path for current to flow.

The FQD5N50CTM-WS MOSFET is a small-package, low-cost, and high-performance device designed to provide a wide range of power switching applications. Its main applications are in power switching, motor drives, and high-current applications such as solenoid switches and motor controllers. Its superiority in power handling combined with its small size makes it ideal for a variety of design and manufacturing applications.

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