FQD5N20LTM Discrete Semiconductor Products

FQD5N20LTM is a type of field effect transistor (FET) that is used to control electric current. A FET can be used to either allow current to flow through a circuit or to block it from doing so. The FQD5N20LTM is a single junction, vertical Power MOSFET and is considered to be the most advanced of its kind in the market today.

The FQD5N20LTM is a drain-to-source vertical type FET has enhanced on-resistance with temperature and guarantee high ripple current capabilities

FQD5N20LTM’s on-resistance is optimized by varying the concentration of the doping profile and the structure of the source/drain regions. Its on-resistance is "flame" shaped to reduce switching noise that is generated at 4kHz or higher. It is designed to support high energy receivers (heR) technology and provides greater output voltage over the temperature range of -50°C to +150°C.

FQD5N20LTM’s working principle is based on the concept of a MOSFET, a field effect transistor in which the current flowing becomes zero when a negative potential is applied to the gate. In a MOSFET, an electric field is created between the gate and the channel, and this field sets up in such a way that it will control the current. When the drain-source voltage of the FET is touched to a positive potential, an electric current will begin to flow through the channel to the drain. The more positive the gate voltage is, the more current flows. To turn off the current, a negative voltage must be applied to the gate, which will cause the electric field to weaken, making the current to stop.

Furthermore, the FQD5N20LTM provides increased device performance and improved process control by offering a wide range of on-resistance values to meet the specific requirements of the application. Changing the gate voltage of the FET allows for a wide range of gate voltages, ranging from 1V to 20V.

It also has high-speed switching capability, low gate drive current requirements, and high voltage on-resistance. The drain-source breakdown voltage is also very high, up to 500V.

FQD5N20LTM is used in applications such as automotive switches and modules, industrial switching and control, opto-isolators, power supplies, and more. It is also used in applications requiring low on-resistance and low gate charge, such as power-up and power-down control, voltage regulation, and battery switching.

In conclusion, the FQD5N20LTM is a single-junction vertical Power MOSFET that is most suitable for applications with limited space and high-speed switching capability requirements. It offers high-speed switching capability, low gate drive current, and high voltage on-resistance to meet the exact needs of the application.