| Allicdata Part #: | FQD5N20LTF-ND |
| Manufacturer Part#: |
FQD5N20LTF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 3.8A DPAK |
| More Detail: | N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surfa... |
| DataSheet: |  FQD5N20LTF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 37W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 1.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behavior of the device. FQD5N20LTF is one kind of FET and it\'s a maximum-ratings N-Channel MOSFET produced by Fairchild Semiconductor. This part is a 20V single N-Channel enhanced mode MOSFET with a low threshold of 2.0V. It features low on-resistance and fast switching performance, making it ideal for battery powered portable applications. This article will focus on the application field and working principle of FQD5N20LTF.FQD5N20LTF is usually used in low voltage DC/DC converters, portable equipment, portable charges, and power management equipments. It is also used in linear and switch mode applications such as on/off control, level shifting,or battery isolation. Due to its low on-resistance and low threshold voltage, FQD5N20LTF is also suitable for low-power applications such as cell phones, PDA, and PDAs. Besides, it features a high breakdown voltage and low gate-source capacitance, making it suitable for high frequency switching applications such as Switching Regulators, DC-DC converters and high speed MOSFET drivers.The working principle of FQD5N20LTF is fairly straightforward. It is an N-Channel MOSFET, meaning it has an active region formed by N regions and a gate region. The N regions are the source and drain, whereas the gate region is the control element of the transistor. When a voltage is applied to the gate terminal, the electric field between it and the N regions will reduce the resistance between them and allow electricity to flow. When the voltage is no longer applied, the electric field will reverse and the N regions will be blocked from each other, preventing further current from flowing.In conclusion, FQD5N20LTF is a 20V single N-Channel enhanced mode MOSFET with a low threshold of 2.0V, and is typically used in low voltage DC/DC converters, portable equipment, portable charges, and power management equipments. It offers low on-resistance, fast switching performance and it is ideal for low-powered applications like cell phones and PDAs. The working principle of FQD5N20LTF is electric field between the gate and N regions strengthens the flow of current while a voltage is applied, thus controlling the electrical behavior of the device.The specific data is subject to PDF, and the above content is for reference
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