FQD5P10TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD5P10TMFSTR-ND |
Manufacturer Part#: |
FQD5P10TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 3.6A DPAK |
More Detail: | P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | FQD5P10TM Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQD5P10TM is an n-channel enhancement mode power field effect transistor (FET). It is manufactured using Fairchild Semiconductor’s advanced PowerTrench process that is especially designed for low on-state resistance and cost-effective design. It provides high performance from a wide range of drain current, gate voltage and temperature. The FQD5P10TM can be used in a variety of applications such as audio amplifiers, motor controls, switching regulators and general purpose switching applications.
The FQD5P10TM has a high operating temperature range of -55°C to 125°C and is designed to provide very low on-state resistance, making it suitable for high current applications. In addition, it has a drain-source voltage rating of 10V and a maximum total power dissipation rating of 2W. The FQD5P10TM is a single device but it can be combined with other FQD5P10TM devices to create an array, making it suitable for applications that require a higher current capacity.
The working principle of the FQD5P10TM is relatively simple. It consists of two main components, the gate and the drain. The gate is basically an insulated electrode that is made out of a material such as Silicon or Germanium. When a voltage is applied to the gate, a small electric field is created which attracts carriers such as electrons, holes, or ions of opposite charge to the surface of the gate. The drain is basically a conductor that is connected between the source and the drain. The entire process creates a current flow from the source to the drain.
The FQD5P10TM is ideal for many applications due to its low on-state resistance and high output current ratings. It can be used in audio amplifiers, motor controllers, switching regulators, and general purpose switching applications. In addition, it is suitable for use in applications requiring low input impedance, high gain, low power dissipation and fast switching speed. This makes it perfect for automotive, telecom, and industrial applications.
The FQD5P10TM is a reliable device designed to provide high performance while keeping costs to a minimum. It has a wide operating temperature range of -55°C to 125°C and is relatively easy to design with. Furthermore, it can be used in arrays to achieve a higher current capacity when higher current ratings are required. All these characteristics make the FQD5P10TM a very popular device for many applications.
The specific data is subject to PDF, and the above content is for reference
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