FQD5N60CTM-WS Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD5N60CTM-WS is a type of single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is capable of handling up to 600V and 5A of current in its typical application. MOSFETs are semiconductor devices that have been used in a variety of electronic circuits since the 1970s. The FQD5N60CTM-WS is one of the most commonly used MOSFETs due to its durable construction, high power capabilities and cost-effectiveness.

In its most basic form, an FQD5N60CTM-WS MOSFET is a three-terminal device consisting of a source terminal, a drain terminal and a gate terminal. The source and drain terminals are connected to a semiconductor substrate, while the gate terminal is isolated from the substrate and electrically controls the source-drain current flow. The gate of the MOSFET works as an insulator, preventing current from flowing through it until a specific amount of gate voltage is applied to it, known as the threshold voltage. Once the threshold voltage is reached, the MOSFET is said to be “on” and current can flow through the MOSFET from the source to the drain.

Due to its unique design, FQD5N60CTM-WS MOSFETs are well-suited for many different types of applications. Some of the most common application fields include power switching, audio amplifiers, voltage regulation, DC-DC converters, and motor control. Additionally, they can also be used to amplify weak signals, frequency convolution and overvoltage protection.

The main working principle behind an FQD5N60CTM-WS MOSFET is the capacitive coupling effect. This effect is based on the idea that when the gate of the MOSFET receives a voltage, a certain amount of electrical charge is transferred between the gate and the MOSFET’s substrate. This charge creates an electric field which attracts electrons from the source and pushes them towards the drain, hence enabling current to flow through the MOSFET. The voltage at which this charge transfer occurs is known as the threshold voltage and is usually between 5 and 10V for most MOSFETs.

Overall, the FQD5N60CTM-WS is an excellent choice for a wide range of applications due to its cost-effectiveness, power capabilities and rugged construction. The working principle behind its operation is based on capacitive coupling, which enables current to flow through the MOSFET when a specific threshold voltage is reached. The FQD5N60CTM-WS is widely used in power switching, audio amplifiers, DC-DC converters, voltage regulation, motor control and overvoltage protection applications.

The specific data is subject to PDF, and the above content is for reference