Allicdata Part #: | FQD5N40TM-ND |
Manufacturer Part#: |
FQD5N40TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 3.4A DPAK |
More Detail: | N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Surfa... |
DataSheet: | FQD5N40TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD5N40TM Application Field and Working Principle
The FQD5N40TM is a type of Field-Effect Transistor (FET). FETs are solid-state electronic devices that are used to control current. They use a voltage, applied to a control gate, to control the current that flows across their main terminals. The FQD5N40TM is a single FET (SFET) device, which means that it has three main terminals - the source, gate, and drain – and only one gate terminal (for controlling the current).
The FQD5N40TM is typically used in power switching applications and provides one of the fastest switching speeds of any device in its class. It is able to support voltages up to 500 volts and is designed for frequencies up to 40 MHz. The FQD5N40TM’s high-speed switching ability allows it to be used in applications such as motor drives, solenoid valves, and other power switching applications. It is also suitable for high-temperature (over-temperature) and solder-resistant applications.
The FQD5N40TM operates using an enhancement mode system. This means that, unlike other FET devices, it does not require drain-gate voltage in order to be activated. Instead, its gate terminal is connected to a positive voltage source, and this causes a region near the FQD5N40TM’s gate to be depleted of electrons and allow current to flow through the device. This process can be reversed by reversing the polarity of the voltage applied to the gate.
The FQD5N40TM also features an internal thermal shutdown switch which is designed to protect the device from excessive temperatures. This thermal shutdown switch will open if the FQD5N40TM’s temperature exceeds the device’s specified maximum operating temperature, which will turn off the device and prevent it from being damaged.
The FQD5N40TM has a small package size and is able to handle high currents, making it ideal for a variety of applications. Its low on-resistance, high-speed switching, and thermal shutdown feature make it a popular choice for high- power switching applications.
The specific data is subject to PDF, and the above content is for reference
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