FQD5N30TM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQD5N30TM is a field-effect transistor based on a Metal-Oxide-Semiconductor (MOS). It is a single-gate device which enables high switching performance and low voltage supply. This technology is widely employed in a variety of application fields thanks to its high linearity and low on-state resistance.

The technology in which FQD5N30TM is based on is used on many other types of transistors and integrated circuits. It\'s mainly characterized by three factors: an insulated gate, a source layer and a drain layer. The device consists of a semiconductor material with two terminal contacts, of which one is used as source and the other as drain. Additionally, a metal gate is placed between them. By applying a controlling voltage at the gate, the current between source and drain can be controlled.

The FQD5N30TM can be used in applications where high current conduction and power switching are required. It can be used in motor control, system protection, lighting control and power control circuits. This device has the added benefit of low voltage operation, which is advantageous in applications with limited power supply. Moreover, the FQD5N30TM has high linearity and low on-state resistance, which makes it suitable for precise switching and current control.

The working principle of the FQD5N30TM is based on the principle of confined charge injection and channel formation. When a voltage is applied to the gate, electrons are injected from the source region into the semiconductor channel. This process creates a conductive channel between the source and drain regions. The current which flows through the channel is regulated by the gate voltage and channel width. By applying a voltage to the gate, the channel width can be adjusted, thus controlling the current between source and drain. The advantage of this device is that it has a higher current capacity than other transistors, thus enabling high switching performance and power control.

In conclusion, FQD5N30TM is an advanced field-effect transistor based on the principle of confined charge injection and channel formation. Its application fields include motor control, system protection, lighting control and power control circuits. Its low voltage operation, high linearity and low on-state resistance make it suitable for precise switching and current control. The principle of operation is based on the injection of electrons from the source layer into the semiconductor channel and its width is regulated by the gate voltage.

The specific data is subject to PDF, and the above content is for reference