FQD5N50TM

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The FQD5N50TM is a high-voltage, high-speed and low-gate charge N-Channel power MOSFET. It is widely used in many applications, such as power supplies, servers, and battery-online UPS systems, since it offers excellent performance and reliability in those applications. This MOSFET is manufactured by Fairchild Semiconductors and is currently available in many different packages.

The FQD5N50TM is a high-voltage N-Channel Power MOSFET and is designed to operate from 10V to 500V. It is rated for drain current up to 5A, so it can be used for most low-power to medium-power applications. It has a low gate charge of 1.5nC, making it suitable for high frequency applications. The transistor has excellent switching characteristics, allowing it to be used for high frequency pulse and switching power supplies, as well as any application where fast switching and high reliability are required.

MOSFETs are four-terminal devices, with the two source, gate, and drain terminals. The main principle of operation involves creating an electric field between the very thin gate oxide and the drain and source of the transistor. This electric field, when applied, modifies the conductivity between the drain and the source of the transistor, causing the MOSFET to switch. The switching speed, as well as the threshold voltage, is determined by the sizing of this electric field.

When the gate voltage is applied and is greater than the threshold voltage, an inversion layer will form at the gate-oxide interface. This layer will provide a mobile inversion charge carrier between the source and the drain, which will cause the drain current to increase. Once the gate voltage is reduced to the threshold voltage, the depletion region at the source-drain channel will reduce, and the transistor will turn off.

Aside from the threshold voltage, the gate-drain capacitance is also critical in determining how fast the MOSFET can switch. This capacitance, which is also known as the input capacitance, is the gate voltage divided by the drain current. This input capacitance is determined by the gate oxide thickness, gate length, and gate-drain overlap areas. To reduce the locking time, the gate oxide should be thinned, the gate length should be increased, and the overlap area of the drain should be minimized. This way, high frequency switching can be achieved with the FQD5N50TM power MOSFET.

In conclusion, the FQD5N50TM is a high-speed and low-gate charge N-Channel power MOSFET that is suitable for many applications such as power supplies, servers, and battery-online UPS systems. The MOSFET is designed to operate from 10V to 500V, enabling it to be used for most low-power to medium-power applications. The transistor offers excellent performance and reliability and has a low gate charge of 1.5nC, making it suitable for high frequency applications. With an optimized gate oxide thickness, gate length, and gate-drain overlap, the FQD5N50TM can achieve high frequency switching, making it a suitable device for any application where fast switching and high reliability are required.

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