FQD5N60CTM_F080

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The FQD5N60CTM_F080 MOSFET is a single-source field effect transistor. It is primarily used in automotive applications, such as in intelligent power modules (IPMs) or traction control systems. It is a popular choice for customers because of its low on-state resistance, ability to handle high current, low gate charge, and support for direct driving using a low voltage source. With its high level of performance and reliability, it is well-suited for use in systems that require reliable power and minimal energy loss.

The FQD5N60CTM_F080 is an N-type MOSFET, meaning it is designed for use in negative channel applications. It features an onboard MOS channel that provides for an incredibly low on-state resistance. This helps to reduce the operating temperature as less current is needed to achieve the desired performance. It has a maximum drain-source voltage rating of 600V and a continuous drain current rating of 115A. The maximum drain-source on-state resistance is 0.017 ohms. The gate charges a maximum of 13nC, allowing it to be driven directly by a low-voltage supply.

In terms of its working principle, the FQD5N60CTM_F080 works just like any other MOSFET. The gate electrodes are used to control the flow of the electrical current between the source and the drain. When a positive voltage is applied to the gate, an electron channel forms between the source and the drain, allowing current to flow. When the gate voltage is lowered, the electron channel disappears and the current flow is cut off. This allows the MOSFET to be used as a switch, controlling power flow to a device or circuit.

The FQD5N60CTM_F080 is a great choice for automotive applications that need reliable power and minimal energy loss. Its low on-state resistance, ability to handle high current, low gate charge, and support for direct driving using a low voltage source make it a popular choice. It is easy to see why this MOSFET is so popular in the automotive industry.

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