FQD5P20TM Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 1.85A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.7A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Transistors - FETs, MOSFETs - SingleFQD5P20TM The FQD5P20TM is a single power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device normally used in high-power switching applications. Its high breakdown voltage, low on-resistance and fast switching times make it ideal for a variety of applications, such as in motor control, switched-mode power supplies, rectifiers, and power amplifiers.The FQD5P20TM is manufactured using advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which is designed to provide high-power performance in a relatively small footprint. The device’s high output current, low on-resistance, low gate charge, and fast switching times make it well-suited for a variety of DC to DC conversion, and other high-power applications. The FQD5P20TM also features a low input capacitance, which helps to reduce switching losses in switched-mode power supplies.When it comes to switching, the FQD5P20TM offers up to a 20A drain current and a maximum drain-source voltage of 40V. in addition, the device’s low-gate characteristics (gate-source voltage = 4.5V) make the FQD5P20TM suitable for applications requiring low-voltage switching. The FQD5P20TM also features a low gate charge and a fast switching time, which enable high-speed switching and improved power efficiency in switching applications.The FQD5P20TM can also be used in high-frequency applications, such as RF and analog power amplifiers, thanks to its low input capacitance. The device can also be used in DC-AC capacitive and inductive power supply applications due to its high breakdown voltage. Furthermore, its low on-resistance and fast switching times make the FQD5P20TM well-suited for AC motor-control applications.Lastly, the FQD5P20TM can be used in a wide range of power rectifying applications, such as SMPS (Switched Mode Power Supply) rectifiers, pulse width modulators, switching regulators, and half-bridge power converters. Its low on-resistance and fast switching times allow for efficient current rectification, reducing power losses and improving overall system efficiency.In short, the FQD5P20TM is a versatile, high-performance power MOSFET device designed for a variety of switching and power management applications. Its advanced LDMOS technology, high breakdown voltage, low on-resistance, fast switching time, and low input capacitance make it an ideal choice for a number of high-power and high-frequency applications. With its wide range of features and capabilities, the FQD5P20TM makes an excellent option for any designer looking for a reliable and efficient power MOSFET device.

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