Allicdata Part #: | FQD5N20TF-ND |
Manufacturer Part#: |
FQD5N20TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3.8A DPAK |
More Detail: | N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surfa... |
DataSheet: | FQD5N20TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD5N20TF is a field-effect transistor (FET) that belongs to a broad category of transistors called single MOSFETs. This type of transistor is widely used in electrical and electronic devices such as amplifiers, switches, and logic gates. It was first developed in the 1960s and has since become an integral part of modern electronics.
The FQD5N20TF is characterized by its high performance and low switching losses. It is designed to provide near-accurate levels of power dissipation, as well as fast switching times. Its main features include low gate capacitance, low RDSon (resistance between drain-source terminals), and excellent voltage withstand. In order to achieve these characteristics, the FQD5N20TF is manufactured in various packages, depending on the application.
The FQD5N20TF is utilized in various applications. Its main application field is power switching and protection. It can be used as a switch to control the polarity of a current, or to protect sensitive electronic components from over-voltage or over-current conditions. In power switching, the FQD5N20TF can switch at frequencies of up to 500 kHz, while in protection applications it can handle up to 3 A. In addition, the FQD5N20TF is used in the medical and automotive industries, providing reliable and accurate on/off operations. Moreover, the FQD5N20TF can also be utilized in audio amplifiers, RF power amplifiers, motor drivers, and other electronics.
In terms of its working principle, the FQD5N20TF uses bipolar and field-effect transistors (MOSFETs). MOSFETs are devices that are created from a combination of p-type and n-type semiconductor materials. In a single MOSFET, the n-type material provides the gate for controlling current, while the p-type material provides the drain and source. When a voltage is applied to the gate the cross-sectional area of the device changes and this results in the controlling of peak current levels.
The FQD5N20TF is capable of operating at a wide range of temperatures, from -55 °C to 175 °C, making it suitable for a variety of applications that require high temperature operation. It is also highly reliable and long-lasting, making it ideal for long-term use. In addition, it features low switching losses, making it one of the most efficient MOSFETs on the market. Finally, the FQD5N20TF is easy to use, making it ideal for applications requiring low complexity.
The FQD5N20TF is a versatile single MOSFET designed to provide excellent performance, reliability and flexibility for a variety of applications. Its low switching losses and wide temperature range make it suitable for high power switching and protection applications. It also features excellent voltage withstand and high frequency operation, making it an ideal choice for audio amplifiers, RF power amplifiers, motor drivers, and other electronics.
The specific data is subject to PDF, and the above content is for reference
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