FQD5N50CTM_F080 Allicdata Electronics
Allicdata Part #:

FQD5N50CTM_F080-ND

Manufacturer Part#:

FQD5N50CTM_F080

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 4A DPAK
More Detail: N-Channel 500V 4A (Tc) 2.5W (Ta), 48W (Tc) Surface...
DataSheet: FQD5N50CTM_F080 datasheetFQD5N50CTM_F080 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: QFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The FQD5N50CTM_F080 is a type of field effect transistor (FET) which belongs to the category of single MOSFETs. FETs are a type of active electrical device which are commonly used for switching and amplifying electronic signals. It works by controlling the amount of current that is allowed to flow through the device, by controlling the voltage which is applied between its two terminals.

A FQD5N50CTM_F080 has an electric field at its drain or source that allows current to flow through it in an ON or OFF state. The ON state occurs when electric potential is applied at the drain or source, and the reverse OFF state enables the transistor to be used as an isolation switch. When it is in the OFF state, no current will flow through the device.

The current that this device can switch or amplify depends on the gate-to-source voltage (Vgs). The current capability of an FET can be increased by increasing this voltage, which causes the transistor to channel more current through its channel than it would with a lower Vgs.

The FQD5N50CTM_F080 FET has many applications, especially in the fields of power electronics, telecommunications, and automobile engineering. It is often used as a switch or amplifier because of its high current handling capability, low operating voltages, and low power consumption.

It can be used in power supplies and electronic control systems such as high power DC-to-DC converters, AC choppers and high-current motor control systems. It is also used in cell phone base stations, where it helps to ruggedize the power amplifiers inside the phone. Other applications include the protection of automotive inverters and power supplies, audio amplifiers, and power for RF applications.

The FQD5N50CTM_F080 operates at high operating temperature so it can be safely used in high temperature environments as it has a higher maximum operating temperature than conventional transistors. In addition, it also has a low gate charge which allow it to switch quickly and yet remain energy efficient. It also has good thermal performance, making it a popular choice in automotive systems and in the industrial sector.

The FQD5N50CTM_F080 is an efficient and reliable device with a wide range of applications in various fields. Its high current handling capability and low voltage operation makes it a preferred choice amongst engineers, while its low power consumption and excellent thermal performance makes it suitable for both commercial and industrial applications. With its wide range of benefits, the FQD5N50CTM_F080 is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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