Allicdata Part #: | FQD5N60CTF-ND |
Manufacturer Part#: |
FQD5N60CTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 2.8A DPAK |
More Detail: | N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surfa... |
DataSheet: | FQD5N60CTF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 49W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD5N60CTF is a popular insulated gate bipolar transistor (IGBT) developed by Fairchild Semiconductor. It is a five-pin single device that combines the bipolar transistor structure with an insulated gate field effect transistor (MOSFET) structure. The FQD5N60CTF is mainly used in motor drive applications, switching power supplies, inverters, and other power management systems.
The FQD5N60CTF is designed for operation over a wide range of temperatures and voltages. It provides up to 5 Amp of current at a maximum collector-emitter voltage of 600 V. It has a low on-state resistance, providing improved system efficiency. The FQD5N60CTF also features fast switching speeds, enabling it to be used in motor drive applications where motor speed needs to be controlled precisely.
The FQD5N60CTF is a N-channel IGBT, which means it has two separate devices within the single package. The first is an insulated gate field effect transistor (MOSFET) which is the power semiconductor device that switches the current in the circuit. The other is a bipolar transistor, which is used for fast turn-off of the gate. These two components work together to provide precise current switching control.
The FQD5N60CTF is designed to provide superior performance in power control applications. It has been designed and tested to ensure reliability and long life. In addition, the device features built-in protection features such as over-voltage protection and over-temperature protection. This ensures that the FQD5N60CTF is able to operate safely and efficiently in high-power applications without risk of damage or failure.
The working principle of the FQD5N60CTF is fairly straightforward. When a voltage is applied to the gate of the IGBT, it will cause electrons to flow from the source to the drain, forming an electric current. This is because the MOSFET is responsible for controlling the current from the source to the drain. The current is then controlled by the bipolar transistor, which acts as a switch and can turn off the current very quickly. This rapid switching allows for precise control of the current and is ideal for applications that require high-speed operation or precise control of the performance of the device.
Overall, the FQD5N60CTF is a versatile and reliable insulated gate bipolar transistor that can be used in a variety of power control applications. It provides low on-state resistance, fast switching speeds and built-in protection features to ensure safety and reliability. With its combination of features, it is an ideal choice for motor drive applications, switching power supplies and inverters.
The specific data is subject to PDF, and the above content is for reference
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