Allicdata Part #: | FQD5P20TF-ND |
Manufacturer Part#: |
FQD5P20TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 3.7A DPAK |
More Detail: | P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surfa... |
DataSheet: | FQD5P20TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.85A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD5P20TF is a Field-Effect Transistor (FET) used in a variety of circuits. It is one of the most commonly used single MOSFETs and is used in many linear and digital applications. The FQD5P20TF is based on the N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology, which enables it to be used in both analog and digital systems. It is a low power device, making it suitable for low-power applications.
The FQD5P20TF has a maximum drain-source current rating of 44 Amps (A) with a maximum drain-source voltage rating of 20 Volts (V). It is capable of switching high currents and voltages, which makes it suitable for many different applications such as power control, audio amplification, and logic control. It is also very noise resistant, which allows it to be used in high-noise environments.
The FQD5P20TF has a number of useful features which make it especially useful in many different applications. First, it has a very high signal to noise ratio, making it suitable for applications which require a high signal to noise ratio. Secondly, it has a low input and output capacitance, which enables it to switch more quickly and smoothly. Thirdly, it has a very low gate charge, which reduces the power consumed by the FET during operation.
The working principle of the FQD5P20TF is based on the principle of field effect. In MOSFETs, this process involves the movement of electrons through the semiconductor material to form a barrier that can control current flow. This barrier is formed by establishing an electric field between the source and the drain and gate regions of the transistor. When a gate voltage is applied to the transistor, it creates an inversion layer on the semiconductor material that can control current flow. This voltage is referred to as the "gate voltage". If the gate voltage is high enough, it allows current to flow through the transistor.
The FQD5P20TF is commonly used in many different markets and applications. It is used in automotive, industrial, medical, and consumer electronics. It is also often used in analog and logic circuits such as but not limited to amplifiers, mixers, digital signal processors, and power management circuits. It is also used in many high-frequency circuits such as RF amplifiers and filters.
The FQD5P20TF is a very versatile FET and can be used in a variety of circuits and applications. Its high signal to noise ratio and low gate charge makes it suitable for both high-quality audio applications and low power applications. Its high ratings of drain-source current and drain-source voltage make it suitable for power control, audio amplification, and logic control. It is also a low-noise device, making it suitable for high-noise environments. Overall, the FQD5P20TF is a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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