FQD5N50CTM

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	625pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

FQD5N50CTM is a specialized transistor. It belongs to Transistors - FETs, MOSFETs - Single product category. The main characteristic of FQD5N50CTM is that it is a high-voltage, high-current field effect transistor with fast switching. This can make it very suitable for a wide range of industrial and electronic applications. Besides its primary use, FQD5N50CTM has some other specialized applications, such as for high frequency switching and for use in motor control applications. This article looks at the application field and working principle of FQD5N50CTM.

Working Principle

FQD5N50CTM works on the basis of a MOSFET. A MOSFET is a type of field effect transistor that operates using both electron and hole flow across a PN junction. This means that no physical connection is necessary between the source and drain of the transistor, allowing it to operate at high voltages, currents and speeds. The FQD5N50CTM is composed of a drain and source, a gate and an insulated gate terminal. Typically the insulated gate terminal is the highest voltage point on the circuit. When the insulated gate voltage is lower than either the drain or the source voltage the transistor is “off” and no current flows between the drain and the source. When the insulate gate voltage is higher than either the drain or source voltage the transistor is “on”, allowing current to flow between the drain and the source.

Applications of FQD5N50CTM

FQD5N50CTM has a wide range of applications where fast switching is required. One of the most common applications is for motor control. Novice high voltage circuits can benefit from the FQD5N50CTM\'s ability to reduce the amount of switching required. This gives the circuit more accuracy, since it reduces the need to rapidly switch between a high and low state multiple times in a single sequence.FQD5N50CTM also has some specialized applications, such as for high-frequency switching. For example, it is used in AC motors because of its ability to switch rapidly and handle high voltages and currents. This makes FQD5N50CTM ideal for controlling the speed and direction of rotation of an AC motor.Other applications of FQD5N50CTM include power conversion, audio power amplification, power switchable barriers and even act as a switch for LCD or LED displays. FQD5N50CTM is also ideal for use in applications where a low on-state resistance is required, such as for supplying power to an amplifier or other high-power application.

Conclusion

FQD5N50CTM is a high-voltage, high-current field effect transistor with fast switching capability. This makes it ideal for a wide range of industrial and electronic applications, including motor control, power conversion, audio power amplification, power switchable barriers and LCD/LED displays. It is also well-suited for high-frequency switching applications where a low on-state resistance is required. By understanding how FQD5N50CTM works and its primary applications, engineers and other professionals can begin to make use of this useful device.

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