IPB80N04S303ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80N04S303ATMA1TR-ND

Manufacturer Part#:

IPB80N04S303ATMA1

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 80A TO263-3
More Detail: N-Channel 40V 80A (Tc) 188W (Tc) Surface Mount PG-...
DataSheet: IPB80N04S303ATMA1 datasheetIPB80N04S303ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.81206
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Vgs(th) (Max) @ Id: 4V @ 120µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 188W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The IPB80N04S303ATMA1 is a single N-channel Trench MOSFET designed for high-efficiency power conversion applications, such as DC-DC power supplies, multiple output power supplies, brushless motors, and other high current and high switching frequency applications. It is designed with a vertical channel structure which allows for high-speed switching performance, low RDS (on) and robust source-drain diode performance. The MOSFETis also equipped with an integrated temperature sense feature, allowing it to automatically adjust the current rating based on the operating environment.

The IPB80N04S303ATMA1 is an ideal device for power supply designs of voltages up to 80V and currents up to 70A. It has a fast switching speed and a low on resistance of 0.0078Ω and a very low parasitic capacitance of only 2.8 pF (Ciss @10μA). The device also has a very low gate charge, making it one of the most efficient power MOSFETs on the market.

The IPB80N04S303ATMA1 is operated by a common N-channel MOSFET gate drive circuit. It is capable of being driven by either a logic level control signal or a PWM drive signal. It is best suited for conversion applications that require high-efficiency and low distortion, such as those found in renewable energy applications.

The IPB80N04S303ATMA1 has a maximum junction temperature of 175°C and it is housed in an SOT-223 package. It is available in both through-hole and surface mount versions, and is RoHS compliant. The device can be used in a variety of applications such as DC-DC converters, motor/ motion control, rail converters, and DC/DC converters.

The IPB80N04S303ATMA1 is a very versatile MOSFET that is suitable for a wide range of applications. Its fast switching speed and low on resistance make it ideal for applications that require high-efficiency and low distortion. Additionally, the device’s integrated temperature sense feature allows it to automatically adjust the current rating based on the operating environment. Finally, the device is available in both through-hole and surface mount versions, making it suitable for many different applications.

The specific data is subject to PDF, and the above content is for reference

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