IPB80N06S407ATMA1

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The IPB80N06S407ATMA1 is a single N-channel MOSFET, specially designed to withstand high energy pulses. It is made by Infineon Technologies AG, the leading manufacturer and supplier of state-of-the-art power electronic components, and is part of the company’s OptiMOS® family. This MOSFET is a low-Qg device and provides improved dv/dt performance for reliable switching in variable frequency applications. This versatile Transistor provides excellent power efficiency at high and low temperatures, making it ideal for a variety of applications.

The IPB80N06S407ATMA1 has a maximum drain-source voltage of 60V with a current rating of 317A. It is built on a 8x8mm surface-mount package and is capable of producing high output power. The device has a low RDS(on) of 0.0063mΩ, making it suitable for a wide range of applications. The transistors have been designed to provide efficient switching even at high frequency, up to 5.6Mhz. The IPB80N06S407ATMA1 is a high-performance transistor and is the perfect choice for modern high-power applications.

IPB80N06S407ATMA1 is an excellent choice for power supplies, converters, and motor drives, as well as other high frequency power control applications. It is widely used in Solar Photovoltaic, Power Systems, and Industrial & Automotive Motor Drives sectors. The transistor is also suitable for applications such as Solar Inverters, AC-DC Power Supplies, Battery Management Systems, DoD Motors and Switch Mode Power Supplies.

The IPB80N06S407ATMA1’s working principle is based on the physical effect of electron tunneling. In this type of transistor, when the gate voltage (VGS) is increased, the drain current (ID) increases according to the equation ID = K(VGS-Vt)², where K is a scaling factor and Vt is the threshold voltage. This type of FET is also known as an enhancement-mode MOSFET, meaning that the gate voltage needs to be higher than the threshold voltage in order for the transistor to be “on”. This transistor is capable of providing a high level of efficiency at high or low frequencies.

To summarise, the IPB80N06S407ATMA1 is a single N-channel MOSFET that is capable of providing a high level of efficiency and power efficiency at high and low frequencies. It is the perfect choice for a variety of high-frequency power control applications, such as Solar Photovoltaic, Power Systems, and Industrial & Automotive Motor Drives. The transistor operates on the physical effect of electron tunneling, where the gate voltage needs to be higher than the threshold voltage in order for the transistor to be “on”. Overall, it is a versatile transistor with a low Qg value, a low RDS(on) value and improved dv/dt performance, making it excellent for reliable switching in variable frequency applications.

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