IPB80N06S205ATMA1

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5110pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IPB80N06S205ATMA1 is a single product from International Rectifier and is a special type of transistor known as a Field Effect Transistor (FET). It is one of the most popular types of FETs. This type of transistor is also referred to as a metal oxide semiconductor field effect transistor (MOSFET).The IPB80N06S205ATMA1 is a N-channel enhancement device that has a high input impedance and low on-state output resistance. Additionally, the device has an integrated high-voltage gate protection diode.This device is ideal for use in a wide range of applications including battery management, audio amplifier circuits, and automotive applications. It is also suitable for use in applications that require very low on-state output resistance. This device is also capable of handling a maximum drain source voltage of 600V and a drain current of up to 5.2A.The basic working principle of this type of FET is based on electrostatic field control. A voltage is applied on the control gate of the device, and this voltage creates an electric field in the channel between the source and the drain. The electric field controls the conductivity of the channel by modifying its resistance.Because the channel resistance is modulated by the electric field, the output current of the device varies with the gate-source voltage. This makes the FET ideal for smaller signal amplification and for switching applications that require high voltage and high current. The FET also features a high input impedance and low on-state output resistance, which makes it well-suited for many different types of applications.In general, the IPB80N06S205ATMA1 is an ideal choice for many different types of applications. It is a reliable and robust device that is capable of handling large drain source voltages and high drain currents. This FET is also extremely versatile, and it can be used in a variety of different applications. Its low on-state output resistance, high input impedance, and integrated high-voltage gate protection diode make it an excellent choice for a variety of applications.

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