IPB80N04S403ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80N04S403ATMA1TR-ND

Manufacturer Part#:

IPB80N04S403ATMA1

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 80A TO263-3-2
More Detail: N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-T...
DataSheet: IPB80N04S403ATMA1 datasheetIPB80N04S403ATMA1 Datasheet/PDF
Quantity: 5000
1000 +: $ 0.49795
Stock 5000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 4V @ 53µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPB80N04S403ATMA1 is a type of metal-oxide-semiconductor field-effect-transistor (MOSFET). It belongs to the family of single-MOSFET devices. As with all MOSFETs, it consists of two main parts: the gate and the channel. The gate is a metal structure which serves as an interface between the voltage on the gate and the channel; it is also used as an electrode for current control. The channel is a dielectric material between the gate and the source/drain regions. By changing the voltage on the gate, the current passing through the channel can be varied.

The IPB80N04S403ATMA1 is a type of MOSFET which is particularly well-suited for applications which require a large amount of current to be controlled. This device is capable of handling up to 80 amperes of continuous drain current and handling up to 200 volts of drain-source breakdown (VDSS) voltage. This makes it well-suited for applications such as motor controls, battery chargers, DC-DC converters and power supplies.

Due to its large current handling capability, the IPB80N04S403ATMA1 is also well-suited for applications which require a large amount of power to be switched between multiple sources. For example, electric vehicles often require large amounts of power to be switched between the engine and the battery. The IPB80N04S403ATMA1 is capable of handling these large currents with minimal losses, making it ideal for these applications.

The IPB80N04S403ATMA1 operates through an internal gate structure. This gate structure is composed of two independent gates which operate in parallel. The first gate is used to control the voltage on the gate, while the second gate is used to control the flow of current through the channel. By adjusting the voltage on either gate, the current flow through the channel can be precisely controlled.

The IPB80N04S403ATMA1 is also designed to be highly tolerant of temperature fluctuations. This makes it well-suited for applications in areas where temperatures can fluctuate significantly. Additionally, this device is well-suited for high switching frequency applications, such as when controlling a motor’s speed.

In summary, the IPB80N04S403ATMA1 is an ideal device for a wide range of applications. Its large current handling capability and high tolerance for temperature fluctuations make it a great choice for motor control, battery charging, DC-DC converters, and power supplies. Its two gate structure makes it ideal for flexible power switching applications and its high switching frequency makes it well-suited for motor control applications.

The specific data is subject to PDF, and the above content is for reference

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