IPB80N07S405ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80N07S405ATMA1-ND

Manufacturer Part#:

IPB80N07S405ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO263-3
More Detail:
DataSheet: IPB80N07S405ATMA1 datasheetIPB80N07S405ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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IPB80N07S405ATMA1 is a component package in the field of transistors and FETs, specifically in the field of single MOSFETs. The component offers high performance, flexibility, and cost-effectiveness for applications where a single MOSFET is the best solution. This article will discuss the application field and working principle of IPB80N07S405ATMA1.

First, the application field of IPB80N07S405ATMA1 will be discussed. This component is intended for use in low and high-side switches, load distribution switch boards, voltage regulators, lighting systems, and power control systems. The component offers a variety of features that make it suitable for these applications, including a low on-resistance, high switching frequency, and excellent thermal management. Additionally, the component is designed to provide a high level of efficiency and is capable of reducing system noise levels, hence making it a suitable choice for applications that require low power consumption and no audible noise.

Next, the working principle of IPB80N07S405ATMA1 will be discussed. The component is based on the MOSFET operating principle and functions as a voltage controlled switch. As the name suggests, MOSFET stands for Metal-Oxide-Semiconductor-Field-Effect Transistor, and is composed of a semiconductor channel that is sandwiched between two source and drain terminals. When a voltage is applied to the source terminal, it injects electrons or holes into the semiconductor channel at the drain terminal, which results in a current flowing through the channel. The length and width of the semiconductor channel can be varied to alter the size of the amount of current flowing through it, thereby allowing the current to be controlled.

Moreover, the IPB80N07S405ATMA1 also provides a level of protection against ESD (Electro-Static Discharge) events, wherein a static charge can be accidentally discharged. The component utilizes a ZTC (Zero-To-Cap) ESD protection structure, which works by ensconcing the circuit in a Faraday cage of sorts. This cage acts as a container for the circuit, and prevents any static voltage from entering and damaging the circuit, thereby providing a high level of protection in demanding and volatile environments.

In conclusion, the IPB80N07S405ATMA1 is a component package that’s designed to bring high performance, flexibility, and cost-effectiveness in applications where a single MOSFET is the best solution. Its applications include low and high-side switches, load distribution switch boards, voltage regulators, lighting systems, and power control systems. Additionally, it is based on the MOSFET operating principle, utilizing a semiconductor channel to control the flow of current, and has a protection mechanism against ESD events. Thus, it can be concluded that the IPB80N07S405ATMA1 is an outstanding choice for applications that require low power consumption, no audible noise, and high levels of protection.

The specific data is subject to PDF, and the above content is for reference

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