Allicdata Part #: | IPB80N06S2L07ATMA3TR-ND |
Manufacturer Part#: |
IPB80N06S2L07ATMA3 |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 80A TO263-3 |
More Detail: | N-Channel 55V 80A (Tc) 210W (Tc) Surface Mount PG-... |
DataSheet: | IPB80N06S2L07ATMA3 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.64618 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3160pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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IPB80N06S2L07ATMA3 is a high-performance power MOSFET which has a low on-resistance. This MOSFET also has a high effiency and low leakage current. It is a single, vertical N-channel MOSFET which is suitable for switching applications. This MOSFET can be used in a wide range of applications such as DC/DC converters, motor control, lighting lighting, telecoms, and power supplies.
This MOSFET has excellent capacitance and transconductance characteristics making it ideal for high-frequency switching. It has a low on-resistance of 10.7Ω which makes it highly efficient and enables it to switch at high-speeds. Its on-state drain current is 80A which makes it capable of handling even heavy load applications. The high-frequency frequency capability and low transverse capacitance makes it suitable for switching operations at higher frequencies.
The main application field of the IPB80N06S2L07ATMA3 MOSFET is in DC/DC converters. It can be used as a switch for buck, boost, or other DC/DC converters, or other switch mode power supplies, as well as for motor control, lighting control, and telecoms applications. It can also be used as a switch for battery chargers and other high-number current devices.
The working principle of the IPB80N06S2L07ATMA3 MOSFET is based on the junction capacitance effect. The gate of the MOSFET is connected to a voltage and a current source. When a certain gate voltage is applied to the MOSFET, it will turn on and allow current to flow between the drain and source of the MOSFET. The MOSFET’s internal capacitance is then used to keep the MOSFET on for a certain time. This effect reduces the drive power and ensures high efficiency in the switching operations.
The MOSFET can be used in a wide range of applications such as power supplies, DC/DC converters, motor control, telecoms, and lighting control. Its high effiency and low leakage current make it ideal for these applications. The MOSFET is also highly reliable and capable of switching at higher frequencies. Its low on-resistance and excellent capacitance and transconductance make it suitable for switching operations at high frequencies, making it ideal for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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