IPB80N04S204ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80N04S204ATMA1TR-ND

Manufacturer Part#:

IPB80N04S204ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 80A TO263-3
More Detail: N-Channel 40V 80A (Tc) 300W (Tc) Surface Mount PG-...
DataSheet: IPB80N04S204ATMA1 datasheetIPB80N04S204ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPB80N04S204ATMA1 is a single N-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET), one of the most common forms of electronic device used in a broad range of applications. The IPB80N04S204ATMA1 MOSFET is often used in a variety of devices where power or signal control is required, such as in audio amplifiers or LED drivers.

MOSFETs are particularly useful devices due to their low power consumption, high speed switching and excellent noise immunity. This makes them an essential part of many electronic devices, from basic digital logic to advanced power management systems. The IPB80N04S204ATMA1 MOSFET is a perfect example of these benefits as it is able to handle up to 8A at a VDS of 20V.

The working principle of the IPB80N04S204ATMA1 MOSFET can be broken down into two distinct parts. First, the gate channel controls the current flowing through the device, meaning that the device can be used to regulate or even completely stop the flow of current. This is known as the transfer function, and is enabled by the gate-source voltage.

The second part of the working principle of the MOSFET is the linear region. This region is used to adjust the current flow through the device, allowing for precise control over the amount of current flowing through the device. This is enabled by adjusting the drain-source voltage, and is often used in power conversion and signal amplification applications.

The IPB80N04S204ATMA1 MOSFET can therefore be used in a variety of applications, from audio amplifiers and LED drivers to more advanced power management systems and signal amplification. It is capable of providing efficient voltage and current control, which makes it a popular choice for many devices.

The IPB80N04S204ATMA1 MOSFET is commonly used in automotive, industrial, and consumer electronics applications. It is a popular choice for cars, as it can be used to efficiently control the amount of power going to a car battery, as well as reduce the amount of wasted power. It is also used in power supplies and amplifier circuits, as its efficient performance and low power consumption make it ideal for these types of applications.

The IPB80N04S204ATMA1 is a reliable and high-performing MOSFET, and is used in a wide range of applications. Its efficient power management and precise current control features make it a popular choice, and its low power consumption makes it highly efficient. It is an essential part of many devices, and is a great choice for those who need precise control over the amount of power flowing through their devices.

The specific data is subject to PDF, and the above content is for reference

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