IPB80N06S2L05ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80N06S2L05ATMA1TR-ND

Manufacturer Part#:

IPB80N06S2L05ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO263-3
More Detail: N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-...
DataSheet: IPB80N06S2L05ATMA1 datasheetIPB80N06S2L05ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB80N06S2L05ATMA1 is a transistor-based component used in a variety of applications, primarily in the field of power electronics. It is a single-gate, 80A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to be used in a variety of switching, power conversion, and signal conditioning applications. It is typically used to drive a high-current load with low signal levels, making it ideal for power switching applications.

The IPB80N06S2L05ATMA1 is a high power MOSFET, meaning it is capable of handling currents up to 80A. The component operates with a drain-source voltage of 55 V, and is capable of withstanding up to 150A of pulsed current. It also has a fast switching time of 45ns, making it ideal for high speed switching applications. Finally, the component has an on-resistance of only 0.02Ω.

The working principle of the IPB80N06S2L05ATMA1 is based on the field effect transistor (FET) of which it is a type. FETs are a type of transistor that use an electric field, instead of current, to control the flow of current between two terminals. The component is designed to operate as a current-controlled device. When a voltage is applied to its gate, it creates an electric field which attracts electrons to the gate. This, in turn, causes the source-drain resistance to decrease, allowing current to flow between the two terminals.

The IPB80N06S2L05ATMA1 is commonly used in a variety of power electronic applications, such as motor drivers, relay drivers, and dc-dc converters. It is also commonly used in audio amplifier designs, due to its low on-resistance and high power handling capabilities. The component can also be used for general purpose switching and signal conditioning applications.

The IPB80N06S2L05ATMA1 is a versatile component well suited for a wide range of applications. Its fast switching time and low on-resistance capabilities make it ideal for high speed switching and signal conditioning applications, while its high current handling capabilities make it well suited for power conversion and switching applications.

The specific data is subject to PDF, and the above content is for reference

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