IPB80N06S2L11ATMA2

Vgs(th) (Max) @ Id:	2V @ 93µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2075pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	10.7 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB80N06S2L11ATMA2: Its Application Field and Working PrincipleIPB80N06S2L11ATMA2 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. It is commonly used as a voltage-controlled transistor in a wide range of electronics applications. MOSFETs in general are used in a variety of applications, including switching, power control, charge transfer, and amplification. In this article, we will discuss the application area and working principle of the IPB80N06S2L11ATMA2 MOSFET.The IPB80N06S2L11ATMA2 is a single-channel, 60V, 8A, N-channel MOSFET. It is used in applications where a voltage-controlled transistor is needed. This includes motor controls, switch mode power supplies (SMPS), DC-DC converters, power output stages, inverters, and even sound amplifiers.The working principle of the IPB80N06S2L11ATMA2 is based on a principle called “field effect.” This means that the voltage applied to the field effect transistor (FET) modifies the conductivity of the channel between the “source” and “drain” (sometimes called “gate” and “source,” respectively). When the voltage to the gate is increased, the conductivity of the channel increases and more current is allowed to flow. Conversely, when the voltage to the gate is decreased, the conductivity of the channel decreases and less current is allowed to flow.In operation, the source and drain of the MOSFET are connected to a power source and either a load or an output, respectively. The gate of the MOSFET is connected to a voltage or voltage-controlled circuit. When a voltage is applied to the gate, it modifies the channel of the MOSFET and allows current to flow. This allows the MOSFET to be used as a switch, a variable resistor, or an amplifier, depending on the application.The IPB80N06S2L11ATMA2 MOSFET is designed for lower power applications. Its maximum current rating is 8A, with a drain-source voltage of 60V. The on-resistance (RDSon) is 20 mOhm at 4.5V, and the maximum power dissipation is 52W. The MOSFET also has an integrated EMI filter, which reduces EM interference and increases the life of the device.The IPB80N06S2L11ATMA2 MOSFET is a practical tool in many different electronics applications. It is versatile, powerful, and safe to use, making it an excellent choice for many projects. With its wide application field and reliable operation, the IPB80N06S2L11ATMA2 is sure to be a great asset in any circuit.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description