IPB80N06S2L09ATMA1

The IPB80N06S2L09ATMA1 is a type of field effect transistor (FET) consisting of a single MOSFET. It is design for power applications up to 80V and a maximum current output of 62A. They have an excellent current and power capability that results from its high current drive capacity and low on resistance.

Application Field

The IPB80N06S2L09ATMA1 is a great choice for various types of power applications including voltage regulators, DC-DC converters, and motor controllers. Additionally, they are often used in the automotive industries due to their ability to perform in high temperature environment, as well as typically come in a HAL lead-free SO packages, making them compliant with RoHS standards. The IPB80N06S2L09ATMA1 provides a great combination of performance, safety and reliability.

Working Principle

A MOSFET, features four layers of alternating N-type and P-type semiconductors separated by oxide layers, similar to a diode structure. However, a diode only has two layers that are separated by an oxide layer.

The forces of electrons, the building blocks to conduct current, passes through the N-type semiconductor and oxygen layer, to the P-type semiconductor and then pass to the second electrode. This occurs when a voltage is applied to the gate terminal. The opening of the gate, which allows for the force of electrons to travel, is based on the current that is applied to the gate.

When the current applied to the gate is decreased, the MOSFET will act as an open switch, meaning no current will travel between the electrodes and the force of electrons has been blocked, because the gate has been closed. Therefore, this results in a power off state.

The IPB80N06S2L09ATMA1 is an excellent choice for power applications, due to its fast switching times, low on resistance and high current drive capability resulting in greater efficiency. Additionally, its high temperature operational characteristics allows for it to withstand extreme conditions that are often found in the automotive industries. Combining the IPB80N06S2L09ATMA1 with the current sensing functions of a microcontroller would provide a system with greater current accuracy, making it an excellent choice for automotive and power applications.